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HomeSolid State PhenomenaSolid State Phenomena Vol. 55Growth of High Purity GaAs Layers by Vapour Phase...

Growth of High Purity GaAs Layers by Vapour Phase Epitaxy

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Semiconductor Materials and Technology (ICSMT)

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Periodical:

Solid State Phenomena (Volume 55)

Pages:

10-13

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.55.10

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Online since:

August 1997

Authors:

K. Chand, R.K. Purohit

Keywords:

Epitaxial Layer, Gallium Arsenide, Photoluminescence (PL), Vapour Phase

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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