Preface
Epitaxial Growth and Characterization of Nitride Semiconductors
p.1
p.1
Crystalline Bi2Se3 Thin Films: Growth and Properties
p.7
p.7
Growth of High Purity GaAs Layers by Vapour Phase Epitaxy
p.10
p.10
Amorphous Chalcogenide Semiconductors: The Role of Bismuth Addition
p.14
p.14
Suppression of Auger Recombination by Strain in Sb Based mid-IR Lasers
p.20
p.20
Study of Gate Length, Channel Length and Gate-Source Spacing on the GaAs MESFET Characteristics
p.26
p.26
Physical Principles of New Devices Related to Giant Electric Field Effect in MDS Structure
p.29
p.29
Raman Spectroscopic Investigation of ZnO and Doped ZnO Films, Nanoparticles and Bulk Material at Ambient and High Pressures
p.32
p.32
Preface
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volume 55)
Online since:
August 1997
Сopyright:
© 1997 Trans Tech Publications Ltd. All Rights Reserved
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