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HomeSolid State PhenomenaSolid State Phenomena Vol. 55Epitaxial Growth and Characterization of Nitride...

Epitaxial Growth and Characterization of Nitride Semiconductors

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Semiconductor Materials and Technology (ICSMT)

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Periodical:

Solid State Phenomena (Volume 55)

Pages:

1-6

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.55.1

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Online since:

August 1997

Authors:

A. Yoshida

Keywords:

InAlN, InN, Nitride Semiconductors, Plasma-Excited MOVPE

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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