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HomeSolid State PhenomenaSolid State Phenomena Vol. 55Annealing Behaviour of High Energy 120Sn Implanted...

Annealing Behaviour of High Energy ¹²⁰Sn Implanted GaAs

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Semiconductor Materials and Technology (ICSMT)

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Periodical:

Solid State Phenomena (Volume 55)

Pages:

98-100

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.55.98

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Online since:

August 1997

Authors:

Y.P. Ali, V.P. Salvi, A.M. Narsale, B.M. Arora, D. Kanjilal, G.K. Mehta

Keywords:

Annealing, GaAs, MeV Ion Implantation, Radiation Damage

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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