Paper Titles

Chemistry and Physics of Defect Interaction in Semiconductors
p.1

Interaction of Point Defects with Dislocations in Silicon and Germanium: Electrical and Optical Effects
p.67

Interactions of Impurities with Dislocations: Mechanical Effects
p.145

From Point to Extended Defects in Silicon: A Theoretical Study
p.177

Interaction of Hydrogen with Impurities and Defects in Semiconductors
p.203

Defects Involving Oxygen in Crystalline Silicon
p.285

Ultrasound Stimulated Defect Reactions in Semiconductors
p.317

Interaction of Small Molecules with Silicon Surfaces
p.337

Characterisation of Hydrogen and Hydrogen-Related Centres in Crystalline Silicon by Magnetic-Resonance Spectroscopy
p.353

HomeSolid State PhenomenaSolid State Phenomena Vols. 85-86Defects Involving Oxygen in Crystalline Silicon

Defects Involving Oxygen in Crystalline Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defect Interaction and Clustering in Semiconductors

Info:

Periodical:

Solid State Phenomena (Volumes 85-86)

Pages:

285-316

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.85-86.285

Citation:

Cite this paper

Online since:

December 2001

Authors:

A. Sassella

Keywords:

Concentration Measurement, Device Performance, Oxygen Impurity, Oxygen Precipitation, Precipitate Morphology, Precipitate Study

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: