Paper Titles

Chemistry and Physics of Defect Interaction in Semiconductors
p.1

Interaction of Point Defects with Dislocations in Silicon and Germanium: Electrical and Optical Effects
p.67

Interactions of Impurities with Dislocations: Mechanical Effects
p.145

From Point to Extended Defects in Silicon: A Theoretical Study
p.177

Interaction of Hydrogen with Impurities and Defects in Semiconductors
p.203

Defects Involving Oxygen in Crystalline Silicon
p.285

Ultrasound Stimulated Defect Reactions in Semiconductors
p.317

Interaction of Small Molecules with Silicon Surfaces
p.337

HomeSolid State PhenomenaSolid State Phenomena Vols. 85-86Interaction of Point Defects with Dislocations in...

Interaction of Point Defects with Dislocations in Silicon and Germanium: Electrical and Optical Effects

Article Preview

Abstract:

You might also be interested in these eBooks

Defect Interaction and Clustering in Semiconductors

Info:

Periodical:

Solid State Phenomena (Volumes 85-86)

Pages:

67-144

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.85-86.67

Citation:

Cite this paper

Online since:

December 2001

Authors:

Wolfgang Schröter, Hans Cerva

Keywords:

Dangling Bond, Decoration, Dislocation, DLTS, EBIC, EPR, Luminescence, Reconstruction, Silicon Devices, Stacking Fault, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: