Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation

Abstract:

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A microscopic mechanism of the self-formation of a dense pore system in the porous silicon is proposed. According to it, the process of porous silicon self-formation is dictated by the laws of dynamics for a charge carriers system. The proposed mechanism is proved by the results of computer simulation. The values of inter-pore separation distance in p-type based porous material and anodization current threshold density are evaluated; the dependence of an inter-pore separation distance on the carriers concentration, close to n-1/2, is predicted.

Info:

Periodical:

Solid State Phenomena (Volumes 97-98)

Edited by:

Stepas Janušonis

Pages:

181-184

DOI:

10.4028/www.scientific.net/SSP.97-98.181

Citation:

M.E. Kompan et al., "Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation", Solid State Phenomena, Vols. 97-98, pp. 181-184, 2004

Online since:

April 2004

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Price:

$35.00

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