Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation

M.E. Kompan; A.E. Gorodetski; I.L. Tarasova

doi:10.4028/www.scientific.net/SSP.97-98.181

Paper Titles

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Behavior of Hydrogen in Al, Mg and MgAl Plasma Saturated Films
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Self-Formation Processes in Studies of Surface Topography under Ion Irradiation
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Quantum Mechanical Design of Molecular Computers Elements Suitable for Self-Assembling to Quantum Computing Living Systems
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Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation
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The Role of Processes on the Surface in Organization of Long Range Mass-Transport in the Bulk
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Self-Assembled TPPS₄ Nanostructures Revealed by Atomic Force Microscopy
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Atomic Force Microscopy of Self-Assembled Nanostructures of TPPS₄ on SAM Substrates
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Cylindrical Aggregates of TDBC: Linear and Nonlinear Optical Properties Versus Morphology
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Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation

Abstract:

A microscopic mechanism of the self-formation of a dense pore system in the porous silicon is proposed. According to it, the process of porous silicon self-formation is dictated by the laws of dynamics for a charge carriers system. The proposed mechanism is proved by the results of computer simulation. The values of inter-pore separation distance in p-type based porous material and anodization current threshold density are evaluated; the dependence of an inter-pore separation distance on the carriers concentration, close to n^-1/2, is predicted.