Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation
A microscopic mechanism of the self-formation of a dense pore system in the porous silicon is proposed. According to it, the process of porous silicon self-formation is dictated by the laws of dynamics for a charge carriers system. The proposed mechanism is proved by the results of computer simulation. The values of inter-pore separation distance in p-type based porous material and anodization current threshold density are evaluated; the dependence of an inter-pore separation distance on the carriers concentration, close to n-1/2, is predicted.
M.E. Kompan et al., "Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation", Solid State Phenomena, Vols. 97-98, pp. 181-184, 2004