Modelling Geometry of Technological Masks in Lateral Etching Processes

R. Navickas; R. Ciulada

doi:10.4028/www.scientific.net/SSP.97-98.235

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Basic Self-Formation Processes in the Technologies of the Integrated Circuits
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HomeSolid State PhenomenaSolid State Phenomena Vols. 97-98Modelling Geometry of Technological Masks in...

Modelling Geometry of Technological Masks in Lateral Etching Processes

Abstract:

A model of the evolution geometry technological masks and underlaying layers in the lateral etching processes is created for analysis and design of new self-alignment and self-formation technologies semiconductor devices and integrated circuits. The results of the simulation for the different configurations masks and selectivities of the underlaying layers have been presented.

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Periodical:

Solid State Phenomena (Volumes 97-98)

Pages:

235-238

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.97-98.235

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Online since:

April 2004

Authors:

R. Navickas, R. Ciulada

Keywords:

Evolution of Geometry Masks, Integrated Circuits, Lateral Etching, Self-Formation Processes, Semiconductor Devices

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References

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