Modelling Geometry of Technological Masks in Lateral Etching Processes
A model of the evolution geometry technological masks and underlaying layers in the lateral etching processes is created for analysis and design of new self-alignment and self-formation technologies semiconductor devices and integrated circuits. The results of the simulation for the different configurations masks and selectivities of the underlaying layers have been presented.
R. Navickas and R. Ciulada, "Modelling Geometry of Technological Masks in Lateral Etching Processes", Solid State Phenomena, Vols. 97-98, pp. 235-238, 2004