Modelling Geometry of Technological Masks in Lateral Etching Processes

Abstract:

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A model of the evolution geometry technological masks and underlaying layers in the lateral etching processes is created for analysis and design of new self-alignment and self-formation technologies semiconductor devices and integrated circuits. The results of the simulation for the different configurations masks and selectivities of the underlaying layers have been presented.

Info:

Periodical:

Solid State Phenomena (Volumes 97-98)

Edited by:

Stepas Janušonis

Pages:

235-238

Citation:

R. Navickas and R. Ciulada, "Modelling Geometry of Technological Masks in Lateral Etching Processes", Solid State Phenomena, Vols. 97-98, pp. 235-238, 2004

Online since:

April 2004

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Price:

$38.00

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[4] R. Navickas: Electronics and Communications (Kiev) No. 18 (2003), pp.149-154 (in Russian).

[5] J. -W. Park, S. Mohammadi, D. Pavlidis et al.: Solid-State Electronics Vol. 44 (2000), p.2059- (2067).

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