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Cyclic voltammorgram (CV) measurement was used to investigate the reduction process under controlled parameters.
Until to date, the reported work of n-Cu2O is more focus on the construction of homojunction, there are lack data on parameter optimization and also the structural and morphological properties [11, 13].
The graphs shown were only the reduction part of the cyclic voltammmetry measurement.
Based on Fig. 1 and Fig. 2, temperature at 30, 50 and 60℃ seem to have possibility for deposition since there are reduction region of Cu2O.
The region of reduction process is believed to be 2Cu+ + 2OH-àCu2O + H2O (1) However, for pH 5.5 and 6.5, both at 30℃ were not taken for deposition.

Results show that the reduction in compressive strength is greater with the higher cement replacement level for all concretes particularly for POFA binary concretes.
Thus it is necessary to find an alternative way to utilize this wastage, which has various indirect benefits such as reduction in the dumped waste and environment sustainability.
Result and Discussion POFA Binary Concrete According to obtained data in Figure 1, it was observed that POFA decreased the compressive strength of concrete with increasing POFA content compared to PC concrete for all w/b ratios.
The reason for the reduction in compressive strength of POFA binary may be attributed to the effect of PC dilution, which decreases the CH supply and increases the effective water (due to the reduced in PC level) in the mix [14].
However, the strength reduction was increased with increasing POFA level at 45%.

Flaky ZnO thin films were electrodeposited from an aqueous solution of zinc nitrate (Zn(NO3)2) as electrolyte on ITO glass substrate by cathodic reduction method The effect of electrolyte concentration on the structure, morphology and optical properties of ZnO thin films were studied by X-ray diffraction, scanning electron microscopy and UV-Vis spectrometer.
In our study, flaky ZnO thin films were electrodeposited from an aqueous solution of Zn(NO3)2 as electrolyte onto ITO covered glass substrates by cathodic reduction method without any surfactants.
To confirm optical band gap, the absorption data of the samples are conducted to make the relation curve as shown in Fig. 4.
(4) Site ZnO Zn2+ absorption ZnO 2e- NO3- Zn2+ electron transfer ZnO ZnO formation NO2- Fig. 5 The illustration of the electrodeposition of ZnO in Zn(NO3)2 bath Conclusion A facile and low cost synthetic process (cathodic reduction method) to prepare ZnO films in the aqueous solution at low temperature, 70 ℃ without any surfactants is presented, and the reaction mechanism has been discussed systematically.
Levy-Clement, et al., Role of chloride ions on electrochemical deposition of ZnO nanowire arrays from O2 reduction, J.

Therefore, an attempt to explain the effect of quartzite chemical composition on the electro thermal process of ferrosilicon melting was made based on a physicochemical model of a reduction process [2, 3].
The algorithm requires, as the input data, the initial composition of raw mixture, process parameters and a list of components that may appear in the equilibrium composition of each system phase.
In real conditions, the temperature Tw corresponds to the temperature of gases that are by-products in the process of silica reduction with carbon directly after leaving the furnace charge surface.
Also the theoretical yields of elements in the carbothermic reduction process were determined.

Subsequently, 50 mmol glucose, 0.125 mol sodium hydroxide and 2 g zinc powder were added to the PVP solution under vigorous stirring to control the reduction potential and pH.
While the reduction of cupric ion was preceded, the suspension color was gradually changed from black to greenish yellow to brown to reddish brown.
However the nucleation temperature could be lowered under 100� by adding zinc powder because galvanic exchange reaction between copper and zinc was easily occurred due to their large difference of reduction potential.
X-ray diffraction pattern of prepared nanoparticles XRD pattern (Fig. 2) of the resulting product is identical to the single-phase cuprous oxide with a face-centered cubic structure and the diffraction data are in good agreement with JCPDS card of cuprous oxide (JCPDS 05-667).

The conventional sintering costs long time and huge amounts of energy and lead oxide volatilization during high temperature sintering leads to reduction of density and strength.
Results and Discussion Tab.1 Mass reduction of samples Sample Mass(mg) reduction proportion(%) before sintering after sintering difference Method One 2943.32 2939.74 3.58 0.12163 Method Two 2957.95 2957.92 0.03 0.00101 conventional sinter 2993.53 2978.55 14.98 0.50041 The mass of products is the average value of a series samples tested repeatedly.
As can be seen from the data in the Tab.1, the losing mass of conventional processing is remarkably larger than that of microwave methods.

The design and adjustment of the generator and of the excitation equipment permit continuous changes of the terminal voltage in the range of ±5% rated voltage via the setpoint selector under steady-state conditions and at loads varying from no load to rated load and power factors from 0.8 to unity unless specified otherwise on the rating plate, If several rated voltage and frequencies are indicated on the rating plate, the above data apply to each of the rates voltages stated.
Regarding generators with current transformer for droop compensation, potentiometer S in the regulator is adjusted so that there is no reduction in the generator voltage at unity p .f . but a 6% reduction at aero p. f.
The corresponding voltage reduction at 0.8 p. f. is 3.6%.

The comparison of these data suggests that the drain current decreased almost 70% when the total-dose reached 1200 Gy (Si).
For the OTFT with PI gate insulator, nearly 40 % reduction of drain current IDS was observed after a total-dose of 1200 Gy (Si).
Positive oxide-trapped charge buildup dominates at low radiation levels and result in the reduction of threshold voltage.
This reduction in the mobility is consistent with a large increase in the amount of interface state density.

The purpose of this study is to present the sound insulation performance measured in the living room and restroom spaces of real apartment buildings as basic data for further technical development to improve the insulation performance technology of inter-floor airborne sound.
Table 1 Contour of Intensity level Frequency 101㎡-1 84㎡-1 72㎡-1 Over-all 63Hz 250Hz 500Hz 1000Hz Acknowledgements This research was supported by a grant from a Strategic Research Project (A study on noise reduction solutions for adjacent households in apartments) funded by the Korea Institute of Civil Engineering and Building Technology.
Jeong, Evaluation of the Light-weight Floor Impact Sound Reduction Characteristics by Types of Resilient Material, Proc.
Kim, An Analysis on the Floor Impact Reduction of Dry Double-Floor System, Proceeding of the KSNVE. (2011)

The electrical behaviour of these defects impact the overall quality of the SiC devices, e.g. it is known that Single Shockley stacking faults (SSSF) act as recombination centres and expand during forward bias in bipolar devices, resulting in an increase of the on-state resistance [1]; SF can significantly scatter propagating electron waves increasing both the resistance and the Schottky-barrier in n-doped SiC films [4]; point defects, mainly Z1/2 and EH6/7, induce a reduction of the minority carrier lifetime [5] and an increase of the leakage currents in Schottky diodes [6].
Based on data reported in literature [7,10], such a defect corresponds to the 4SSF.
The PL signal is almost constant along the defect, whilst the PC is strongly asymmetric, with deep reduction on one side and graded variation on the other side.
The lifetime reduction is strongly dependent on the type of defect: the 4SSF is a more effective recombination center than a bar defect, with a photoluminescence peak at 2.92 eV.