60Co Gamma–Ray Irradiation Effects on Pentacene-Based Organic Thin-Film Transistors

Li Cai; Toshio Hirao; Hiroaki Yano; Zong Fan Duan; Hideharu Takayanagi; Hideharu Ueki; Takeshi Ohshima; Yasushiro Nishioka

doi:10.4028/www.scientific.net/MSF.687.576

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Fracture Behavior of Organic Silicon Rubber at Different Extension Rate
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⁶⁰Co Gamma–Ray Irradiation Effects on Pentacene-Based Organic Thin-Film Transistors
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Microstructure and Wear-Resistant SiC Film by RF Magnetron Sputtering
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Analysis of ZAO Thin Films by DC Reaction Magnetron Sputtereing
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Combinatorial Synthesis and Evaluation on Thermoelectric Films
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Conversion of Surface Energy and Experimental Investigation on the Self-Motion Behaviors of Liquid Droplets on Gradient Surfaces
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HomeMaterials Science ForumMaterials Science Forum Vol. 68760Co Gamma–Ray Irradiation Effects on...

⁶⁰Co Gamma–Ray Irradiation Effects on Pentacene-Based Organic Thin-Film Transistors

Abstract:

Electrical characterization of ⁶⁰Co γ-ray radiation effects on pentacene-based organic thin-film-transistors having two kinds of gate insulator have been carried out. For transistors with SiO₂ gate insulator, the threshold voltage shifts are consistent with positive charge trapping in the oxide and a “rebound” effect is observed. This “rebound” effect is attributed to the negatively charged interface traps generated during irradiation. For polyimide gate insulator, the threshold voltage continually decreases with an increasing total-dose. At total-dose of 1200 Gy (Si), for the SiO₂ gate insulator, the field-effect mobility decreased by almost 80%, and for polyimide gate insulator, it decreased by 40%.