Analysis of ZAO Thin Films by DC Reaction Magnetron Sputtereing

Feng Lu; Cheng Hai Xu; Li Shi Wen

doi:10.4028/www.scientific.net/MSF.687.585

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HomeMaterials Science ForumMaterials Science Forum Vol. 687Analysis of ZAO Thin Films by DC Reaction...

Analysis of ZAO Thin Films by DC Reaction Magnetron Sputtereing

Abstract:

The high quality ZAO thin films were produced by DC reaction magnetron sputtering technology. The XRD, electrical and optical properties of ZAO thin films were particularly investigated. The results show that ZAO films are polycrystalline hexagonal wurtzite structure，and Al₂O₃ crystal phase are not found. At the same time，the high quality ZAO films with the minimum resistivity of 4.5x×10^-4Ω·㎝, the transmittance in visible region above 80% and the reflectivity in IR region above 70% are gained.

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Periodical:

Materials Science Forum (Volume 687)

Pages:

585-590

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.687.585

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Online since:

June 2011

Authors:

Feng Lu, Cheng Hai Xu, Li Shi Wen

Keywords:

Reflectivity, Resistivity, Transmittance, X-Ray Diffraction (XRD), ZAO Film

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