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ICMSE2014(Fall) is sponsored by International Association of Management Science and Engineering Technology (IAMSET).
Thanks also go to Advanced Materials Research, for its wonderful editor service to this proceeding.
Sponsor International Association of Management Science & Engineering Technology (IAMSET) International Association of Management Sciences and Engineering Technology (IAMSET) is a registered (Reg.No.35848437) scientific and educational organization that dedicated to promote research into and understanding of management science, engineering technology, and improving the solution of technical difficulties in engineering technology application.
The IAMSET members are research scientists, engineers, professors, scholars, managers, and technology students, etc. who worked in management science and engineering technology research.
IAMSET can publish some double-blind refereed academic journals and some Books in engineering technology and application.

Materials Science Forum,1020(2021),13-22
Materials Science Forum,1018(2021),13-22
Materials Science Forum,1018(2021),3-12
Materials Science Forum,1018(2021),33-41
Materials Science Forum,1018(2021),23-32

Materials Science Forum Vols. *** (2004) pp.409-413 online at http://scientific.net  2004 Trans Tech Publications, Switzerland Mathematical Description of Spatial Hob-Generating Motion for an Arbitrary Gear Tooth Profile X.Y.
Ai1,c 1 School of Mechanical Engineering, Shandong University, Jinan 250061, P.R.China a fxying@sdu.edu.cn, blihuifs@sdu.edu.cn, caixing@sdu.edu.cn Keywords: Hob generating motion, Arbitrary gear tooth profile, CNC hobbing, Cutting-edge Abstract.
So, in accordance with the spatial three-dimension mesh theory [3], the coordinate systems Advances in Materials Manufacturing Science and Technology 410 describing the generation motions between hob and workpiece can be setup in Fig. 1.
So, the axial section of this type of hob can be symplified as a spur rack to study. 1 2 3 4 5 7 8 z c M(Yi,Zi) y 2.25m n R aT O c ρ T 6 c (yh) Fig.3 The axial section of hob (amplified) i c i n c c i c y z z tg y z z z ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )cos / , 0 1 0 0 1 0 1 0 0 2 0 = − + < < λ α )0(3 )0()0(2 )0(7 22)0(3 )0(2 )0( , cos)( cicc ciT i zzzy zz y ≤<+ −−= λ ρ y R z z z i aT c i c ( ) ( ) ( ) ( ) , 0 3 0 0 4 0 = − < ≤ )0(5 )0()0(4 )0(7 22)0(3 )0(2 )0( , cos)( cicc ciT i zzzy zz y ≤<+ +−−= λ ρ )0(6 )0()0(5 )0(1 )0()0(1 )0( ,/cos)( ciccn ic i zzzytg zzy ≤<+ += αλ (2) Advances in Materials Manufacturing Science and Technology 412 Fig.3 shows the amplified axial section of tooth number 0.
As long as flexible controlling these motions, an arbitrary specific tooth profile can be machined, but this must Materials Science Forum Vols. *** 413 be realised by means of modern CNC gear hobbing machine.

Synchrotron White Beam X-ray Topography (SWBXT) and Synchrotron Monochromatic Beam X-ray Topography (SMBXT) were performed at the 1-BM beamline at the Advanced Photon Source, Argonne National Laboratory.
Acknowledgements Synchrotron x-ray topographs were recorded using the resources of the Advanced Photon Source (Beamline 1-BM), a U.S.
The Joint Photon Sciences Institute at Stony Brook University provided partial support for travel and subsistence at the Advanced Photon Source.
Forum 924 (2018) 923-926
Forum 645-648 (2010) 291-294.

Materials Science Forum Vols. *** (2004) pp.707-710 online at http://scientific.net  2004 Trans Tech Publications, Switzerland A New Parallel Robot for Steel Snagging B.F.
Cai2,c 1 College of Mechanical Engineering and Automation, Fuzhou University, Fuzhou, Fujian, 350002, China 2 School of Mechanical Engineering & Automation, Northeastern University, Shenyang, Liaoning, 110004, China a fbf@fzu.edu.cn, bshihong@tom.com, cgqcai@ln139.com.cn Keywords: Parallel robot, Kinematics, Dynamics, Workspace, Steel snagging Abstract.
Fig.1 3-DOF 3-legged parallel robot with horizontal slide 3-link for steel snagging Advances in Materials Manufacturing Science and Technology 708 Kinematics and Dynamics Behavior Kinematics Behavior.
The abrasive grains should not A A z x y A1(x1,-A,0) A2(x2,0,0) A3(x3,A,0) p(xp, yp, zp) l l Fig.2 Abbreviated drawing of mechanism o l Materials Science Forum Vols. *** 709 0 20 40 0 60 120 Zw[kg/h] P[kw] Fig.4 The relationship between the grinding power P and the material removal rate Zw be removed from the wheel easily.
The relationship between metal removal rate Zw and grinding power P is shown in Fig.4. 0 100 200 0 2500 5000 Fn[N] Zw[kg/h] 1 2 Advances in Materials Manufacturing Science and Technology 710 The relationship between metal removal rate Zw and grinding power P can be fit as P=kZw m ( 2 ) where k, m is coefficient.

Introduction The SCWR is selected as one of the Generation IV nuclear systems by the Generation IV International Forum (GIF), and it is the unique reactor of water-cooling in GIF.
In early 1960s, many advanced country in nuclear began to research MOX fuel.
References [1] U.S: DOE Nuclear Energy Research Advisory Committee, the Generation IV International Forum.
Starflinger, et al: Nuclear Engineering and Design, 2007, 237, p.513
YIN: Nuclear Science and Engineering, 2008,28(4),p.305(in Chinese)

Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer Heiji Watanabe1,a, Takashi Kirino1, Yusuke Kagei1, James Harries2, Akitaka Yoshigoe2, Yuden Teraoka2, Shuhei Mitani3, Yuki Nakano3, Takashi Nakamura3, Takuji Hosoi1 and Takayoshi Shimura1 1Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan 2Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan 3New Material Devices R&D Center, ROHM CO., LTD., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan awatanabe@mls.eng.osaka-u.ac.jp Keywords: MOS devices, energy band structure, conduction band offset, interface defects, synchrotron radiation x-ray photoelectron spectroscopy Abstract.
Introduction Despite the excellent features of SiC material for advanced power electronics, the performance of SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has suffered from degraded inversion channel mobility.
Therefore, fundamental tactics, such as applying deposited high-permittivity gate oxides [7] and band engineering by utilizing stacked structures, are indispensable to take advantage of C-face SiC-MOS devices.
Forum Vols. 615-617 (2009), p. 557 [4] Y.
Forum Vols. 615-617 (2009), p. 541

Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices Toshihiko Hayashia, Toru Izumib, Tetsuro Hemmic and Katsunori Asanod Power Engineering R&D Center, Kansai Electric Power Co., Inc., 3-11-20 Nakoji, Amagasaki, Hyogo, 661-0974, Japan ahayashi.toshihiko@b4.kepco.co.jp, bizumi.toru@d5.kepco.co.jp, ctetsuro.hemmi@e2.kepco.co.jp, dasano.katsunori@c2.kepco.co.jp Keywords: 4H-SiC, package, power module, Si3N4, AlN, insulating property, breakdown strength Abstract.
At least, even if sufficient insulating properties are provided at room temperature, it is necessary to check the temperature dependence of an insulator’s insulating characteristics in advance for the possibility of deterioration, depending on the manufacturing process.
Forum, Vols. 717-720 (2011), pp.1219-1224 [3] K.
Forum, Vols. 717-720 (2011), pp. 1233-1236 [4] T.
Peier, High Voltage Engineering Symposium, Vol. 4 (1999), pp. 373-376 [6] S.

Effects of Precipitates and Alloying Element on Microstructure and High Temperature Properties of Mg-Al Alloys Yeon Jun Chung a and Kwang Seon Shin b School of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University, Seoul 151-742, Korea a myhome@snu.ac.kr, bksshin@snu.ac.kr Keywords: Heat Resistant Magnesium Alloys, Die-Casting, Microstructure, Tensile Properties Abstract.
Forum Vol. 419-422 (2003), p. 285 [4] C.D.
Forum Vol. 419-422 (2003), p. 407 [8] M.

Pedro Calmon, 900 - Cidade Universitária, 21941-90, Rio de Janeiro, Brazil 2 - UENF - State University of the Northern Rio de Janeiro, LAMAV - Advanced Materials Laboratory; Av.
Alberto Lamego, 2000, 28013-602, Campos dos Goytacazes, Brazil. 3 - IME - Military Institute of Engineering, Department of Materials Science, Praça General Tibúrcio, 80, 22290-270, Rio de Janeiro, Brazil.
Forum (accepted for publication)
Forum. 660-661 (2010) 801- 806 [5] Brazilian Association of Technical Norms.