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Online since: October 2011
Authors: Feng Luo, Tao Zhou, Can Hui Sun, Zhou Sen Hou, Meng Ying Liu
Introduction
The SCWR is selected as one of the Generation IV nuclear systems by the Generation IV International Forum (GIF), and it is the unique reactor of water-cooling in GIF.
In early 1960s, many advanced country in nuclear began to research MOX fuel.
References [1] U.S: DOE Nuclear Energy Research Advisory Committee, the Generation IV International Forum.
Starflinger, et al: Nuclear Engineering and Design, 2007, 237, p.513
YIN: Nuclear Science and Engineering, 2008,28(4),p.305(in Chinese)
In early 1960s, many advanced country in nuclear began to research MOX fuel.
References [1] U.S: DOE Nuclear Energy Research Advisory Committee, the Generation IV International Forum.
Starflinger, et al: Nuclear Engineering and Design, 2007, 237, p.513
YIN: Nuclear Science and Engineering, 2008,28(4),p.305(in Chinese)
Online since: March 2011
Authors: Takuji Hosoi, Takayoshi Shimura, Takashi Nakamura, Yuki Nakano, Heiji Watanabe, Yusuke Kagei, Takashi Kirino, Shuhei Mitani, James Harries, Akitaka Yoshigoe, Yuden Teraoka
Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer
Heiji Watanabe1,a, Takashi Kirino1, Yusuke Kagei1, James Harries2,
Akitaka Yoshigoe2, Yuden Teraoka2, Shuhei Mitani3, Yuki Nakano3,
Takashi Nakamura3, Takuji Hosoi1 and Takayoshi Shimura1
1Department of Material and Life Science, Graduate School of Engineering, Osaka University,
2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
2Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
3New Material Devices R&D Center, ROHM CO., LTD.,
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
awatanabe@mls.eng.osaka-u.ac.jp
Keywords: MOS devices, energy band structure, conduction band offset, interface defects, synchrotron radiation x-ray photoelectron spectroscopy
Abstract.
Introduction Despite the excellent features of SiC material for advanced power electronics, the performance of SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has suffered from degraded inversion channel mobility.
Therefore, fundamental tactics, such as applying deposited high-permittivity gate oxides [7] and band engineering by utilizing stacked structures, are indispensable to take advantage of C-face SiC-MOS devices.
Forum Vols. 615-617 (2009), p. 557 [4] Y.
Forum Vols. 615-617 (2009), p. 541
Introduction Despite the excellent features of SiC material for advanced power electronics, the performance of SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has suffered from degraded inversion channel mobility.
Therefore, fundamental tactics, such as applying deposited high-permittivity gate oxides [7] and band engineering by utilizing stacked structures, are indispensable to take advantage of C-face SiC-MOS devices.
Forum Vols. 615-617 (2009), p. 557 [4] Y.
Forum Vols. 615-617 (2009), p. 541
Online since: January 2013
Authors: Katsunori Asano, Toru Izumi, Toshihiko Hayashi, Tetsuro Hemmi
Insulating Properties of Package
for Ultrahigh-Voltage, High-Temperature Devices
Toshihiko Hayashia, Toru Izumib, Tetsuro Hemmic and Katsunori Asanod
Power Engineering R&D Center, Kansai Electric Power Co., Inc., 3-11-20 Nakoji, Amagasaki, Hyogo, 661-0974, Japan
ahayashi.toshihiko@b4.kepco.co.jp, bizumi.toru@d5.kepco.co.jp, ctetsuro.hemmi@e2.kepco.co.jp, dasano.katsunori@c2.kepco.co.jp
Keywords: 4H-SiC, package, power module, Si3N4, AlN, insulating property, breakdown strength
Abstract.
At least, even if sufficient insulating properties are provided at room temperature, it is necessary to check the temperature dependence of an insulator’s insulating characteristics in advance for the possibility of deterioration, depending on the manufacturing process.
Forum, Vols. 717-720 (2011), pp.1219-1224 [3] K.
Forum, Vols. 717-720 (2011), pp. 1233-1236 [4] T.
Peier, High Voltage Engineering Symposium, Vol. 4 (1999), pp. 373-376 [6] S.
At least, even if sufficient insulating properties are provided at room temperature, it is necessary to check the temperature dependence of an insulator’s insulating characteristics in advance for the possibility of deterioration, depending on the manufacturing process.
Forum, Vols. 717-720 (2011), pp.1219-1224 [3] K.
Forum, Vols. 717-720 (2011), pp. 1233-1236 [4] T.
Peier, High Voltage Engineering Symposium, Vol. 4 (1999), pp. 373-376 [6] S.
Online since: February 2014
Authors: Yun Dian Zhang, Ying Bin Shen, Zhi Ping Lu
Design of An Ultrasonic Pointed Cutter
Yundian Zhang1, a, Yingbin Shen2,b, Zhiping Lu3,c
123School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou, China
azyydd@hdu.edu.cn, bishenyingbin@163.com, ccadlzp@163.com
Keywords: Ultrasonic cutting; Pointed cutter; Mathematical model; Modal analysis; amplitude experiment of the tool.
Ultrasonic cutting technique is an advanced processing method of cutting honeycomb materials.
Ultrasonic cutting technique, as an advanced processing means, is playing an important role in the processing of the honeycomb material. 2.
Packaging Engineering.
Modern Manufacturing Engineering.
Ultrasonic cutting technique is an advanced processing method of cutting honeycomb materials.
Ultrasonic cutting technique, as an advanced processing means, is playing an important role in the processing of the honeycomb material. 2.
Packaging Engineering.
Modern Manufacturing Engineering.
Online since: September 2008
Authors: Michael Dudley, Xian Rong Huang, Ning Zhang, David R. Black, Yi Chen
Black
3,d
,
and Michael Dudley
1,e
1
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, USA
11794-2275
2
Advanced Photon Source, Argonne National Laboratory, Argonne, IL, USA 60349
3
National Institute of Standards and Technology, Gaithersburg, MD, USA 20899-1070
a
yichen1@ic.sunysb.edu, bnizhang@ic.sunysb.edu, cxrhuang@aps.anl.gov,
d
david.black@nist.gov, emdudley@notes.cc.sunysb.edu
Keywords: threading screw dislocation, dislocation sense, sense distribution
Abstract.
The imaging was carried out at the Stony Brook Synchrotron Topography Station, Beamline X-19C, at the National Synchrotron Light Source at Brookhaven National Laboratory and Beamline XOR-33BM at Advanced Photon Source at Argonne National Laboratory, using Slavich VRP-M holographic films at a specimen-plate distance of 10~15 cm.
DE-AC02-76CH00016) and Beamline XOR-33BM, Advance Photon Source, Argonne National Laboratory, which is supported by U.S.
Forum 2007 (accepted) [10] D.
Forum (2007) (accepted) [13] Y.
The imaging was carried out at the Stony Brook Synchrotron Topography Station, Beamline X-19C, at the National Synchrotron Light Source at Brookhaven National Laboratory and Beamline XOR-33BM at Advanced Photon Source at Argonne National Laboratory, using Slavich VRP-M holographic films at a specimen-plate distance of 10~15 cm.
DE-AC02-76CH00016) and Beamline XOR-33BM, Advance Photon Source, Argonne National Laboratory, which is supported by U.S.
Forum 2007 (accepted) [10] D.
Forum (2007) (accepted) [13] Y.
Online since: December 2004
Authors: Jing Feng Zhi, S.T. Huang, W. Zuo, Hao Bo Cheng
Materials Science Forum Vols. *** (2004) pp.755-759
online at http://scientific.net
Ó 2004 Trans Tech Publications, Switzerland
Robust Position Controller Design For Linear Servo Units Used in
Noncircular Machining
S.T.
Hence, the MPRC as the feedforward controller is introduced in the paper, which need not have to identify the system model accurately and works only based on the frequency response data of the closed system, and the system tracking accuracy Advances in Materials Manufacturing Science and Technology 756 is improved [7].
From the block diagram in Fig.3, the output v is expressed as ()() uvdv vGsuGsd =+ (3) Li near Mot or Di st ur bance Obser ver Vel oci t y Cont r ol l er EFC Posi t i on Cont r ol l er MPRC ,vy e r + + + + Fig.1 The Overall Structure of The Proposed Robust Position Controller v + + + u d Gv( s) Gp( s) Fig.2 Conventional Control Scheme in Velocity Loop v + ++ u d Gp( s) Q( s) Gv( s) 1 ()Gns - + + ˆd Fig.3 Robust Control Scheme in Velocity Loop Materials Science Forum Vols. *** 757 where () vpn uv npnvpn GGG G GGGQGGG = +−+ , (1) () pn dv npnvpn GGQ G GGGQGGG − = +−+ (4) If Q(s)˜ 1, the three transfer functions in Eq. (4)~(6) become Guv˜ GvGn/( 1+GvGn), Gdv˜ 0.
This principle is illustrated as Eq.9 and Fig.5. 0 50 100 150 200 250 300 -10 -5 0 Frequency[Hz] magnitude[dB] 0 50 100 150 200 250 300 -150 -100 -50 0 Frequency[Hz]Phase[degrees] Fig.4 Measured Frequency Response Data of the Closed Loop System Advances in Materials Manufacturing Science and Technology 758 2 1 (()) 1 1(0)() () (0)() k ki N j N f k k XXk rie NAA p q − −Ω = =+⋅ Ω ∑ (9) where rf (i) is the control signal after MPRC , Gclose(z) is the discrete transform function of the cosled loop system.
Cheng: Chinese Journal of Mechanical Engineering Vol. 37 No.8 (2001), p. 43.
Hence, the MPRC as the feedforward controller is introduced in the paper, which need not have to identify the system model accurately and works only based on the frequency response data of the closed system, and the system tracking accuracy Advances in Materials Manufacturing Science and Technology 756 is improved [7].
From the block diagram in Fig.3, the output v is expressed as ()() uvdv vGsuGsd =+ (3) Li near Mot or Di st ur bance Obser ver Vel oci t y Cont r ol l er EFC Posi t i on Cont r ol l er MPRC ,vy e r + + + + Fig.1 The Overall Structure of The Proposed Robust Position Controller v + + + u d Gv( s) Gp( s) Fig.2 Conventional Control Scheme in Velocity Loop v + ++ u d Gp( s) Q( s) Gv( s) 1 ()Gns - + + ˆd Fig.3 Robust Control Scheme in Velocity Loop Materials Science Forum Vols. *** 757 where () vpn uv npnvpn GGG G GGGQGGG = +−+ , (1) () pn dv npnvpn GGQ G GGGQGGG − = +−+ (4) If Q(s)˜ 1, the three transfer functions in Eq. (4)~(6) become Guv˜ GvGn/( 1+GvGn), Gdv˜ 0.
This principle is illustrated as Eq.9 and Fig.5. 0 50 100 150 200 250 300 -10 -5 0 Frequency[Hz] magnitude[dB] 0 50 100 150 200 250 300 -150 -100 -50 0 Frequency[Hz]Phase[degrees] Fig.4 Measured Frequency Response Data of the Closed Loop System Advances in Materials Manufacturing Science and Technology 758 2 1 (()) 1 1(0)() () (0)() k ki N j N f k k XXk rie NAA p q − −Ω = =+⋅ Ω ∑ (9) where rf (i) is the control signal after MPRC , Gclose(z) is the discrete transform function of the cosled loop system.
Cheng: Chinese Journal of Mechanical Engineering Vol. 37 No.8 (2001), p. 43.
Online since: June 2008
Authors: Masahiro Kubota, Xiao Lin Wu, Kenong Xia, Wei Xu
Bulk Mg produced by back pressure equal channel angular
consolidation (BP- ECAC)
Xiaolin Wu 1, a
, Wei Xu
1, b
, Masahiro Kubota2, c
and Kenong Xia 1, d
1
Department of Mechanical Engineering and ARC Centre of Excellence for Design in Light Metals,
The University of Melbourne, Victoria 3010, Australia
2
College of Industrial Technology, Nihon University,1-2-1 Izumi-cho, Narashino, 275-8575 Japan
a
xiaolinw@unimelb.edu.au, bweixu@unimelb.edu.au, ckubota@cit.nihon-u.ac.jp,
d
kxia@unimelb.edu.au
Keywords: Magnesium; equal channel angular processing (ECAP); powder consolidation;
particles; severe plastic deformation
Abstract.
The ever increasing demands for using magnesium alloys have driven researchers to turn to the development of advanced materials using novel processing techniques such as severe plastic deformation (SPD).
Forum (2008), in press
Forum Vol. 503-504 (2006), p. 233
Forum Vol. 29 (2005), p. 441.
The ever increasing demands for using magnesium alloys have driven researchers to turn to the development of advanced materials using novel processing techniques such as severe plastic deformation (SPD).
Forum (2008), in press
Forum Vol. 503-504 (2006), p. 233
Forum Vol. 29 (2005), p. 441.
Online since: January 2013
Authors: Jun Wang, Shu Ren Han, Feng Wang
Study of mine environment monitoring system based on wireless sensor network
Jun Wang1,a, Feng Wang2,b and Shuren Han1,c
1School of Mechanical and Electronic Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, China
2Nanjing Gaote Gearbox Manufacturing Co., Ltd, Nanjing 210012, China
amkfriend@126.com, bwf0411@126.com, c18911107@qq.com
Keywords: Wireless sensor network, Zigbee, Data fusion, Network topology, Early-warning system.
Forum Vol. 30(2011), p.837 (In Chinese) [2] Information on http://www.zigbee.org/ [3] Texas Instruments: CC2530 Data Sheet (Revision B) swrs081b (Texas Instruments, Texas 2011) [4] Qun Duan, A Ni Zhao: Advanced Materials Research.
Forum Vol. 411(2011), p.592 [5] Jian Hong Wang, Lei Liu: Applied Mechanics and Materials.
Forum Vol. 197(2011), p.7
Forum Vol. 30(2011), p.837 (In Chinese) [2] Information on http://www.zigbee.org/ [3] Texas Instruments: CC2530 Data Sheet (Revision B) swrs081b (Texas Instruments, Texas 2011) [4] Qun Duan, A Ni Zhao: Advanced Materials Research.
Forum Vol. 411(2011), p.592 [5] Jian Hong Wang, Lei Liu: Applied Mechanics and Materials.
Forum Vol. 197(2011), p.7
Online since: July 2020
Authors: Michael Dudley, Balaji Raghothamachar, Hui Wang Wu, Yafei Liu, Long Yang, Li Xia Zhao, Tuerxun Ailihumaer
China
3Department of Materials Science and Chemical Engineering, Stony Brook University,
Stony Brook, NY 11794-2275, USA
ayanglong@poshing.cn, bzhaolixia@poshing.cn, cwuhuiwang@poshing.cn, dyafei.liu@stonybrook.edu, etuerxun.ailihumaer@stonybrook.edu, fbalaji.raghothamachar@stonybrook.edu, gmichael.dudley@stonybrook.edu
Keywords: 4H-SiC substrate; Homo-epitaxial layer; Defects morphology; Basal plane dislocations; Threading edge dislocations.
Synchrotron White Beam X-ray Topography (SWBXT) and Monochromatic Beam X-ray Topography (SMBXT) [10] were conducted at 1-BM, Advanced Photon Source at Argonne National Laboratory to analyze defect distribution of substrates and homo-epitaxial wafer with different thickness.
Forum. 778-780 (2014) 851-854
Forum. 778-780 (2014) 26-30
Forum. 778-780 (2014) 328-331
Synchrotron White Beam X-ray Topography (SWBXT) and Monochromatic Beam X-ray Topography (SMBXT) [10] were conducted at 1-BM, Advanced Photon Source at Argonne National Laboratory to analyze defect distribution of substrates and homo-epitaxial wafer with different thickness.
Forum. 778-780 (2014) 851-854
Forum. 778-780 (2014) 26-30
Forum. 778-780 (2014) 328-331
Online since: May 2007
Authors: Taek Kyun Jung, Mok Soon Kim, Sung Yi, T.J. Sung
Yi
2,b
1
School of Materials Science and Engineering, Inha University, 253 Yonghyun-dong, Nam-gu,
Incheon 402-751, Korea
2
Dept. of Mechanical and Materials Engineering, Portland State University, Portland, OR 97207,
USA
a
mskim@inha.ac.kr, bsungyi@cecs.pdx.edu
Keywords: Amorphous Al alloy, Amorphous/crystalline composite, Powder forging, Extrusion
Abstract.
The advanced mechanical properties achieved in the Al-Ni/Al-Mg and Al-Ni/Al-Mn composite specimens may be correlated with the existence of unidirectional array of constituent powders.
Forum Vols. 475-479 (2005), p. 3493 [3] S.J.
Forum Vols. 510-511 (2006), p. 830 Fig. 5 Maximum compressive strength and compressive plastic strain for the bulk specimens forged at 648K (a) and extruded at 648K (b).
The advanced mechanical properties achieved in the Al-Ni/Al-Mg and Al-Ni/Al-Mn composite specimens may be correlated with the existence of unidirectional array of constituent powders.
Forum Vols. 475-479 (2005), p. 3493 [3] S.J.
Forum Vols. 510-511 (2006), p. 830 Fig. 5 Maximum compressive strength and compressive plastic strain for the bulk specimens forged at 648K (a) and extruded at 648K (b).