SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation

Kenta Murayama; Tsukasa Hori; Shunta Harada; S. Xiao; M. Tagawa; Toru Ujihara

doi:10.4028/www.scientific.net/MSF.897.24

Paper Titles

Reduction of Dislocation Density in Bulk Silicon Carbide Crystals Grown by PVT on Profiled Seeds
p.7

Quality Improvement of 4’’ 4H-SiC Crystal by Using Modified Seed Adhesion Method
p.11

3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers
p.15

Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H₂ Etching
p.19

SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation
p.24

Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth
p.28

Solvent Design for High-Purity SiC Solution Growth
p.32

Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate
p.39

150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD
p.43

HomeMaterials Science ForumMaterials Science Forum Vol. 897SiC Solution Growth on Si Face with Extremely Low...

SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation

Abstract:

In order to achieve a high-quality SiC crystal in solution growth, one of the most difficult issues is to grow a thick layer on Si face avoiding polytype transformation. In this case, two-dimensional nucleation, which leads to the polytype transformation, is frequently induced because a density of threading screw dislocations acting as a source of spiral step decreases and wide terraces form by step bunching as growth proceeds. Therefore, it is very difficult to stabilize the polytype of crystals grown with extremely low density of threading screw dislocations. In this study, we tried to overcome these problems by using specially designed seed crystal and optimizing growth temperature and temperature distribution. We successfully grew thick low-threading-dislocation density SiC crystal without polytype transformation under the condition of high growth temperature and homogeneous temperature distribution.

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Materials Science Forum (Volume 897)

Pages:

24-27

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.24

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Online since:

May 2017

Authors:

Kenta Murayama*, Tsukasa Hori, Shunta Harada, S. Xiao, M. Tagawa, Toru Ujihara

Keywords:

Polytype Transformation, Step-Flow Growth, Temperature Distribution, Top Seeded Solution Growth

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