Quality Improvement of 4’’ 4H-SiC Crystal by Using Modified Seed Adhesion Method

Jung Woo Choi; Jong Hwi Park; Jung Doo Seo; Jung Gyu Kim; Myung Ok Kyun; Kap Ryeol Ku; Hwang Ju Kim; Dong Hoon Lee; Yeon Suk Jang; Won Jae Lee

doi:10.4028/www.scientific.net/MSF.897.11

Paper Titles

Preface, Committees, Sponsors

Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping
p.3

Reduction of Dislocation Density in Bulk Silicon Carbide Crystals Grown by PVT on Profiled Seeds
p.7

Quality Improvement of 4’’ 4H-SiC Crystal by Using Modified Seed Adhesion Method
p.11

3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers
p.15

Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H₂ Etching
p.19

SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation
p.24

Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth
p.28

Solvent Design for High-Purity SiC Solution Growth
p.32

HomeMaterials Science ForumMaterials Science Forum Vol. 897Quality Improvement of 4’’ 4H-SiC Crystal by Using...

Quality Improvement of 4’’ 4H-SiC Crystal by Using Modified Seed Adhesion Method

Abstract:

The method to attach seed to crucible lid as well as seed quality is very important for obtaining high quality crystals. Therefore, modified seeding method was developed for improving adhesive layer between seed and graphite crucible lid. SiC single crystal grown with modified seeding method definitely exhibited lower micropipe density (MPD) and lower full width at half maximum (FWHM) values comparing with values from conventional seeding method. Etch pit density of SiC crystal was successfully decreased with using the modified seeding method.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

11-14

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.11

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Online since:

May 2017

Authors:

Jung Woo Choi, Jong Hwi Park, Jung Doo Seo, Jung Gyu Kim, Myung Ok Kyun, Kap Ryeol Ku, Hwang Ju Kim, Dong Hoon Lee, Yeon Suk Jang, Won Jae Lee*

Keywords:

Defect Formation, Interface, Quality Improvement, Seeding

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