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HomeMaterials Science ForumMaterials Science Forum Vol. 897Solvent Design for High-Purity SiC Solution Growth

Solvent Design for High-Purity SiC Solution Growth

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Abstract:

In order to design a solvent for high-purity SiC solution growth, the impurity incorporation and the carbon solubility of various solvent materials have been investigated. Among the transition metal elements, the impurity elements of Cr, Ti, V and Hf are more readily incorporate during the solution growth than the other transition metal elements. The thermodynamic calculation revealed that the Y-Si solvent has relatively large carbon solubility, which is comparable to the Cr-Si and Ti-Si solvents often used in the solution growth of bulk SiC crystals. From these results, the Y-Si solvent is expected to be a suitable solvent for the high-purity SiC solution growth. Furthermore, we have demonstrated that the Y-Si solvent can achieve lower incorporation of metal impurity in the grown crystal than the Cr-Si solvent maintaining the growth rate.

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Silicon Carbide and Related Materials 2016

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Periodical:

Materials Science Forum (Volume 897)

Pages:

32-35

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.32

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Online since:

May 2017

Authors:

Shunta Harada*, Goki Hatasa, Kenta Murayama, Tomohisa Kato, M. Tagawa, Toru Ujihara

Keywords:

CALPHAD, Impurity, Silicon Carbide (SiC), Top-Seeded Solution Growth, Yttrium

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© 2017 Trans Tech Publications Ltd. All Rights Reserved

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* - Corresponding Author

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