Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping

Tetsuya Miyazawa; Takeshi Tawara; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.897.51

Paper Titles

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150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD
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Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
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Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping
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High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
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Improvement of Quality of Thick 4H-SiC Epilayers
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V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Carrier Lifetime Control of 4H-SiC Epitaxial...

Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping

Abstract:

An epitaxial growth technique for 4H-SiC with B doping was developed to control the carrier lifetimes of the epilayers. A linear relationship was observed between the B doping concentration and the flow rate of tri-ethyl-boron, which was used as the B doping source. A room temperature photoluminescence spectrum of a N-and B-doped epilayer showed a broad B-related peak at 2.37 eV instead of a band-edge luminescence, which indicates that the carrier recombination path was changed by the B doping. The minority carrier lifetime decreased (< 30 ns at 250°C) with increasing B doping concentration. The thermal stability of the short carrier lifetime was compared with a conventional carrier lifetime reduction method, namely an electron irradiation technique. After thermal annealing at 1700°C, the carrier lifetime of the electron irradiated epilayer recovered while that of the B-doped epilayer remained, indicating that the carrier lifetime controlled by the B doping technique was more stable against the thermal processes.

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Materials Science Forum (Volume 897)

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51-54

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https://doi.org/10.4028/www.scientific.net/MSF.897.51

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Online since:

May 2017

Authors:

Tetsuya Miyazawa*, Takeshi Tawara, Hidekazu Tsuchida

Keywords:

Bipolar Degradation, Boron Doping, Carrier Lifetime, Epitaxial Growth

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