150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD

Kazukuni Hara; Hiroaki Fujibayashi; Yuuichi Takeuchi; Shoichiro Omae

doi:10.4028/www.scientific.net/MSF.897.43

Paper Titles

SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation
p.24

Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth
p.28

Solvent Design for High-Purity SiC Solution Growth
p.32

Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate
p.39

150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD
p.43

Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
p.47

Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping
p.51

High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
p.55

Improvement of Quality of Thick 4H-SiC Epilayers
p.59

HomeMaterials Science ForumMaterials Science Forum Vol. 897150mm Silicon Carbide Selective Embedded Epitaxial...

150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD

Abstract:

In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperature and adding HCl, the epitaxial growth rate at the bottom of trench is greatly enhanced compare to growth on the mesa top. And we obtain high growth rate 7.6μm/h at trench bottom on 150mm-diameter-wafer uniformly with high speed rotation (1000rpm).

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Periodical:

Materials Science Forum (Volume 897)

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43-46

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.43

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Online since:

May 2017

Authors:

Kazukuni Hara*, Hiroaki Fujibayashi, Yuuichi Takeuchi, Shoichiro Omae

Keywords:

4H-SiC, Embedded, Epitaxial Growth, High Speed Rotation, MOSFET, RAMAN, SiC-CVD

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