High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices

Naoto Ishibashi; Keisuke Fukada; Akira Bandoh; Kenji Momose; Hiroshi Osawa

doi:10.4028/www.scientific.net/MSF.897.55

Paper Titles

Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate
p.39

150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD
p.43

Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
p.47

Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping
p.51

High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
p.55

Improvement of Quality of Thick 4H-SiC Epilayers
p.59

Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p⁺⁺ Emitters
p.63

V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes
p.67

Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device
p.71

HomeMaterials Science ForumMaterials Science Forum Vol. 897High-Quality 100/150 mm p-Type 4H-SiC Epitaxial...

High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices

Abstract:

This paper presents a high-quality 100/150 mm p-type 4H-SiC epitaxial wafer prepared by chemical vapor deposition; this wafer is suitable for high-voltage bipolar device applications. The density of killer defects for bipolar devices including downfalls, triangular-shaped defects, and basal plane dislocations (BPDs), is less than 0.1 cm^-2 in the proposed 100 mm n/p multilayer epitaxial wafer. The in-plane thickness and doping uniformity of the 150 mm p-layer is 3.0% and 11.0%, respectively. The doping concentration of the p-layer can be controlled in the 1E+16 cm^-3 to 1E+19 cm^-3range.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2016

View Preview

Info:

Periodical:

Materials Science Forum (Volume 897)

Pages:

55-58

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.55

Citation:

Cite this paper

Online since:

May 2017

Authors:

Naoto Ishibashi*, Keisuke Fukada, Akira Bandoh, Kenji Momose, Hiroshi Osawa

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), Bipolar Devices, Chemical Vapor Deposition (CVD), Epitaxial Growth, n/p Multilayer Structure, p-Type Doping

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet and H. Peyre, Mater. Sci. Forum 858 (2016) 137-142.

DOI: 10.4028/www.scientific.net/msf.858.137

Google Scholar

[2] N. Nordell and A. Schoner, J. Electron. Mater. 26 (1997) 187-192.

Google Scholar

[3] M.A. Fanton, B.E. Weiland and J.M. Redwing, J. Crystal Growth 310 (2008) 4088-4093.

Google Scholar

[4] J.　P. Bergman, H. Lendenmann, P. A. Nilsson, U. Lindefelt and P. Skytt, Mater. Sci. Forum 353 (2001) 299-302.

DOI: 10.4028/www.scientific.net/msf.353-356.299

Google Scholar

[5] H. Tsuchida, M. Ito, I. Kamata and M. Nagano, Mater. Sci. Forum 615 (2009) 67-72.

Google Scholar