Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping
p.51
p.51
High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
p.55
p.55
Improvement of Quality of Thick 4H-SiC Epilayers
p.59
p.59
Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters
p.63
p.63
V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes
p.67
p.67
Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device
p.71
p.71
Investigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer
p.75
p.75
Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers
p.79
p.79
Depth Profile of Doping Concentration in Thick (> 100 μm) and Low-Doped (< 4 × 1014 cm-3) 4H-SiC Epilayers
p.83
p.83
V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes
Abstract:
Epitaxial growth of 4H-SiC with intentional V or Ti doping was performed to obtain short minority carrier lifetimes, using VCl4 or TiCl4 as the doping sources. The doping efficiencies and quality of the epilayers were compared for H2+SiH4+C3H8 and H2+SiH4+C3H8+HCl gas systems. The addition of V or Ti in highly N-doped epilayer demonstrated very short minority carrier lifetimes of 20-30 ns at 250°C.
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Periodical:
Materials Science Forum (Volume 897)
Pages:
67-70
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Online since:
May 2017
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© 2017 Trans Tech Publications Ltd. All Rights Reserved
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