Depth Profile of Doping Concentration in Thick (&gt; 100 μm) and Low-Doped (&lt; 4 × 1014 cm-3) 4H-SiC Epilayers

Keisuke Fukada; Naoto Ishibashi; Yoshihiko Miyasaka; Akira Bandoh; Kenji Momose; Hiroshi Osawa

doi:10.4028/www.scientific.net/MSF.897.83

Paper Titles

V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes
p.67

Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device
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Investigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer
p.75

Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers
p.79

Depth Profile of Doping Concentration in Thick (> 100 μm) and Low-Doped (< 4 × 10¹⁴ cm^-3) 4H-SiC Epilayers
p.83

Silicon Deposition on 3C-SiC Seeds of Different Orientations
p.87

Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD
p.91

A Study on 3C-SiC Carbonization on Misoriented Si Substrates: From Research to Production Scale Reactors
p.95

Susceptor Coating Materials Applicable for SiC Reactor Cleaning
p.99

HomeMaterials Science ForumMaterials Science Forum Vol. 897Depth Profile of Doping Concentration in Thick...

Depth Profile of Doping Concentration in Thick (> 100 μm) and Low-Doped (< 4 × 10¹⁴ cm^-3) 4H-SiC Epilayers

Abstract:

The depth profiles of n-type doping concentration in thick (>100 μm) and low-doped (< 4 × 10¹⁴ cm^-3) 4H-SiC epilayers grown by chemical vapor deposition (CVD) were investigated. The variation in doping concentration during epitaxial growth are considered to be caused by: (1) variation in gas flow due to parasitic deposition, (2) variation in precursor decomposition rate due to change in reactor temperature, (3) variation in dopant incorporation rate due to change in wafer temperature, and (4) variation in supply of background dopants. By controlling all these parameters, a constant depth profile in thick (> 100um) epilayers was realized.