A Study on 3C-SiC Carbonization on Misoriented Si Substrates: From Research to Production Scale Reactors

Matteo Bosi; Claudio Ferrari; Daniel Nilsson; Peter J. Ward

doi:10.4028/www.scientific.net/MSF.897.95

Paper Titles

Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers
p.79

Depth Profile of Doping Concentration in Thick (> 100 μm) and Low-Doped (< 4 × 10¹⁴ cm^-3) 4H-SiC Epilayers
p.83

Silicon Deposition on 3C-SiC Seeds of Different Orientations
p.87

Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD
p.91

A Study on 3C-SiC Carbonization on Misoriented Si Substrates: From Research to Production Scale Reactors
p.95

Susceptor Coating Materials Applicable for SiC Reactor Cleaning
p.99

Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces
p.107

Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
p.111

Analysis of Interface Trap Density and Channel Mobility in 4H-SiC NMOS Capacitors and Lateral MOSFETs
p.115

HomeMaterials Science ForumMaterials Science Forum Vol. 897A Study on 3C-SiC Carbonization on Misoriented Si...

A Study on 3C-SiC Carbonization on Misoriented Si Substrates: From Research to Production Scale Reactors

Abstract:

In this work we have studied the carbonization of 3C-SiC on misoriented Si substrates, using different thermal ramp rates and shapes. We observed that the heating rate (°C/sec) from carbonization temperature to film growth temperature plays a major role in controlling the void density. Moreover, void formation can be eliminated by the introduction of silane at different temperatures during the heating ramp. The studies were performed on a small research reactor and the results were successfully transferred to a production scale reactor, aimed to the production of 3C-SiC power devices manufactured on 100 and 150 mm Si substrates.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

95-98

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.95

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Online since:

May 2017

Authors:

Matteo Bosi*, Claudio Ferrari, Daniel Nilsson, Peter J. Ward

Keywords:

3C-SiC, Carbonization, Misoriented Si, Power Device, Production, Void

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