Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD

Philip Hens; Ryan Brow; Hannah Robinson; Michael Cromar; Bart van Zeghbroeck

doi:10.4028/www.scientific.net/MSF.897.91

Paper Titles

Investigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer
p.75

Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers
p.79

Depth Profile of Doping Concentration in Thick (> 100 μm) and Low-Doped (< 4 × 10¹⁴ cm^-3) 4H-SiC Epilayers
p.83

Silicon Deposition on 3C-SiC Seeds of Different Orientations
p.87

Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD
p.91

A Study on 3C-SiC Carbonization on Misoriented Si Substrates: From Research to Production Scale Reactors
p.95

Susceptor Coating Materials Applicable for SiC Reactor Cleaning
p.99

Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces
p.107

Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
p.111

HomeMaterials Science ForumMaterials Science Forum Vol. 897Growth of Cubic Silicon Carbide on Silicon Using...

Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD

Abstract:

In this paper, we report, for the first time, growth of high-quality single-crystalline 3C-SiC on silicon substrates using Hot Filament Chemical Vapor Deposition (HF-CVD). Rocking curve X-Ray diffraction (XRD) measurements revealed a full-width at half maximum (FWHM) as low as 333 arcsec for a 15 μm thick layer. Low tensile strain, below 0.1%, was measured using Raman spectroscopy. This quality was achieved with a carefully optimized process making use of the additional degrees of freedom the hot filaments create. For example, the hot filaments allow for precursor pre-cracking. Additionally, they allow a tuning of the vertical thermal gradient which creates an improved thermal field compared to classic Chemical Vapor Deposition techniques used for the deposition of this material today.

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Periodical:

Materials Science Forum (Volume 897)

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91-94

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.91

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Online since:

May 2017

Authors:

Philip Hens*, Ryan Brow, Hannah Robinson, Michael Cromar, Bart van Zeghbroeck

Keywords:

3C-SiC, Heteroepitaxy, Hot Filament CVD, RAMAN, X-Ray Diffraction

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