Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers

Marcin Zielinski; Thierry Chassagne; Roxana Arvinte; Adrien Michon; Marc Portail; Sylvie Contreras; Sandrine Juillaguet; Hervé Peyre

doi:10.4028/www.scientific.net/MSF.897.79

Paper Titles

Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p⁺⁺ Emitters
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V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes
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Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device
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Investigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer
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Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers
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Depth Profile of Doping Concentration in Thick (> 100 μm) and Low-Doped (< 4 × 10¹⁴ cm^-3) 4H-SiC Epilayers
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Silicon Deposition on 3C-SiC Seeds of Different Orientations
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Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD
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A Study on 3C-SiC Carbonization on Misoriented Si Substrates: From Research to Production Scale Reactors
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Influence of Growth Temperature on Site...

Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers

Abstract:

After presenting an exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3CSiC films grown by chemical vapor deposition (CVD), we focalize once more on what is called site competition effects. We observed that the influence of C/Si ratio on dopant (Al, N) incorporation in SiC was qualitatively different depending on whether the growth experiments were performed in “low temperature” (LT) or “high temperature” (HT) regime. Partial explanation of observed phenomena basing on thermal evolution of carbon coverage of SiC surface is proposed.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

79-82

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.79

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Online since:

May 2017

Authors:

Marcin Zielinski, Thierry Chassagne, Roxana Arvinte, Adrien Michon, Marc Portail, Sylvie Contreras, Sandrine Juillaguet, Hervé Peyre

Keywords:

4H-SiC, Chemical Vapor Deposition (CVD), n-Type Doping, p-Type Doping, Site Competition, Surface Coverage

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References

[1] R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon, P. Kwasnicki, S. Juillaguet, and H. Peyre, Mater. Sci. Forum, 821–823, (2015), 149.

DOI: 10.4028/www.scientific.net/msf.821-823.149

Google Scholar

[2] M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail, P. Kwasnicki, L. Konczewicz, S. Contreras, S. Juillaguet and H. Peyre, Mat. Science Forum 858, (2016) 137.

DOI: 10.4028/www.scientific.net/msf.858.137

Google Scholar

[3] T. Kimoto, A. Itoh, and H. Matsunami, Appl. Phys. Lett., 67, (1995), 2385.

Google Scholar

[4] K. Kojima, T. Suzuki, S. Kuroda, J. Nishio, and K. Arai, Jpn. J. Appl. Phys., 42, (2003), L637.

Google Scholar

[5] K. Kojima, S. Kuroda, H. Okumura, and K. Arai, Appl. Phys. Lett. 88, (2006), 021907.

Google Scholar

[6] M. Zielinski, C. Moisson, S. Monnoye, H. Mank, T. Chassagne, S. Roy, A.E. Bazin, J. F Michaud, and M. Portail, Mater. Sci. Forum, 645–648, (2010), 753.

DOI: 10.4028/www.scientific.net/msf.645-648.753

Google Scholar

[7] A. Leycuras, Mater. Sci. Forum, 338–342, (2000), 241.

Google Scholar

[8] P. Kisliuk, J. Phys. Chem. Solids, 3 (1957) 95.

Google Scholar

[9] O. Danielsson, O. Kordina, E. Janzen, Mater. Sci. Forum, 778-780, (2014), 218.

Google Scholar