Silicon Deposition on 3C-SiC Seeds of Different Orientations

Taguhi Yeghoyan; Kassem Alassaad; Véronique Soulière; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.897.87

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HomeMaterials Science ForumMaterials Science Forum Vol. 897Silicon Deposition on 3C-SiC Seeds of Different...

Silicon Deposition on 3C-SiC Seeds of Different Orientations

Abstract:

Silicon deposition on 3C-SiC seeds was studied as a function of seed orientations and thicknesses. The 3C-SiC seeds were grown on silicon substrates of (100), (110), (111) and (211) orientations by standard two-step CVD (low temperature carbonization followed by high temperature epitaxy). Then, the Si layers were grown onto these SiC seeds at various temperatures. Almost all the conditions gave polycrystalline deposit. At high deposition temperature (1350°C) the Si deposit was composed of separated hillocks and was never fully covering the 3C-SiC seeds. Lower deposition temperatures (≤ 1100°C) allowed obtaining silicon full coverage but not full epitaxy. Focusing on (100) orientation, it was shown that (100) Si deposit could be obtained but only on the as carbonized 3C-SiC sample, i.e. with the thinner SiC layer.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

87-90

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.87

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Online since:

May 2017

Authors:

Taguhi Yeghoyan*, Kassem Alassaad, Véronique Soulière, Gabriel Ferro

Keywords:

3C-SiC, Chemical Vapor Deposition (CVD), Heteroepitaxy, Seed Orientation, Silicon on SiC

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