Depth Profile of Doping Concentration in Thick (> 100 μm) and Low-Doped (< 4 × 1014 cm-3) 4H-SiC Epilayers
p.83
p.83
Silicon Deposition on 3C-SiC Seeds of Different Orientations
p.87
p.87
Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD
p.91
p.91
A Study on 3C-SiC Carbonization on Misoriented Si Substrates: From Research to Production Scale Reactors
p.95
p.95
Susceptor Coating Materials Applicable for SiC Reactor Cleaning
p.99
p.99
Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces
p.107
p.107
Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
p.111
p.111
Analysis of Interface Trap Density and Channel Mobility in 4H-SiC NMOS Capacitors and Lateral MOSFETs
p.115
p.115
Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers
p.119
p.119
Susceptor Coating Materials Applicable for SiC Reactor Cleaning
Abstract:
In order to develop a cleaning process for the silicon carbide chemical vapor deposition reactor, the susceptor coating materials are developed for protecting the susceptor from the etching by chlorine trifluoride gas. The chlorine trifluoride gas does not give a serious damage to the pyrolitic carbon film at the temperatures lower than 480 °C, at which temperature the quick and practical reactor cleaning process is expected to be possible
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Periodical:
Materials Science Forum (Volume 897)
Pages:
99-102
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Online since:
May 2017
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© 2017 Trans Tech Publications Ltd. All Rights Reserved
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