Analysis of Interface Trap Density and Channel Mobility in 4H-SiC NMOS Capacitors and Lateral MOSFETs

Martin Domeij; Jimmy Franchi; Krister Gumaelius; K. Lee; Fredrik Allerstam

doi:10.4028/www.scientific.net/MSF.897.115

Paper Titles

A Study on 3C-SiC Carbonization on Misoriented Si Substrates: From Research to Production Scale Reactors
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Susceptor Coating Materials Applicable for SiC Reactor Cleaning
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Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces
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Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
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Analysis of Interface Trap Density and Channel Mobility in 4H-SiC NMOS Capacitors and Lateral MOSFETs
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Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers
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Anomalous Fowler-Nordheim Tunneling through SiO₂/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements
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Two-Dimensional Imaging of Trap Distribution in SiO₂/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
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Oxidation Effect for the Carbon Related Defect Formation in SiC/SiO₂ Interface by First Principles Calculation
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Analysis of Interface Trap Density and Channel...

Analysis of Interface Trap Density and Channel Mobility in 4H-SiC NMOS Capacitors and Lateral MOSFETs

Abstract:

Lateral implanted SiC MOSFETs and NMOS capacitors were fabricated and used to extract channel mobility and interface state density D_IT for three different gate oxides. D_IT values were extracted using the high(1 MHz)-low(1 kHz) method for NMOS capacitors and the subthreshold slope for MOSFETs. The subthreshold slope extraction gave 6-20 times higher D_IT values compared to the high-low method, presumably because the high-low method cannot capture the fastest traps [1]. None of the methods resulted in clear proportionality between the inverse channel mobility and D_IT. The subthreshold slope gave similar D_IT values for samples with different surface p-doping concentrations indicating that the method is not sensitive to the threshold voltage.