Oxidation Effect for the Carbon Related Defect Formation in SiC/SiO2 Interface by First Principles Calculation

Kenta Chokawa; Kenji Shiraishi

doi:10.4028/www.scientific.net/MSF.897.131

Paper Titles

Analysis of Interface Trap Density and Channel Mobility in 4H-SiC NMOS Capacitors and Lateral MOSFETs
p.115

Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers
p.119

Anomalous Fowler-Nordheim Tunneling through SiO₂/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements
p.123

Two-Dimensional Imaging of Trap Distribution in SiO₂/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
p.127

Oxidation Effect for the Carbon Related Defect Formation in SiC/SiO₂ Interface by First Principles Calculation
p.131

Low Density of Near-Interface Traps at the Al₂O₃/4H-SiC Interface with Al₂O₃ Made by Low Temperature Oxidation of Al
p.135

Non-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow States
p.139

Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique
p.143

Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation
p.147

HomeMaterials Science ForumMaterials Science Forum Vol. 897Oxidation Effect for the Carbon Related Defect...

Oxidation Effect for the Carbon Related Defect Formation in SiC/SiO₂ Interface by First Principles Calculation

Abstract:

We used first principles molecular dynamics calculations to study the formation of defects at the 4H-SiC(0001)/SiO₂ interface by thermal oxidation. O₂ molecules introduced at the interface easily form the C-C-C defect structure along with the Si-O-Si structure. The central carbon atom in the C-C-C defect is three-fold coordinated and it induces mid-gap states, which correspond to the energy level of the (C₂)_Si defect structure, known as the dumb-bell structure.