Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique

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We study the interface properties of 4H silicon carbide Si-face 0001 and a-face 11220 power MOSFETs using the charge pumping technique. MOSFETs produced on the a-face show a higher electron mobility than Si-face devices, although their charge pumping signal is 5 times higher, indicating a higher interface/border trap density. We show the main contribution to the interface/border trap density on a-face devices originates from deep states in a wide range around midgap, whereas Si-face devices show a higher and exponentially increasing interface/border state density close to the conduction band edge of 4H silicon carbide, resulting in reduced mobility.

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Edited by:

Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis

Pages:

143-146

Citation:

G. Rescher et al., "Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique", Materials Science Forum, Vol. 897, pp. 143-146, 2017

Online since:

May 2017

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$38.00

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