Physical Characterisation of 3C-SiC(001)/SiO2 Interface Using XPS

Fan Li; Oliver James Vavasour; Marc Walker; David M. Martin; Yogesh K. Sharma; Stephen Russell; Michael R. Jennings; Amador Pérez-Tomás; Philip  Andrew Mawby

doi:10.4028/www.scientific.net/MSF.897.151

Paper Titles

Low Density of Near-Interface Traps at the Al₂O₃/4H-SiC Interface with Al₂O₃ Made by Low Temperature Oxidation of Al
p.135

Non-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow States
p.139

Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique
p.143

Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation
p.147

Physical Characterisation of 3C-SiC(001)/SiO₂ Interface Using XPS
p.151

Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation
p.155

Universal Parameter Evaluating SiO₂/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy
p.159

Electrical Properties and Interface Structure of SiC MOSFETs with Barium Interface Passivation
p.163

The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors
p.167

HomeMaterials Science ForumMaterials Science Forum Vol. 897Physical Characterisation of 3C-SiC(001)/SiO2...

Physical Characterisation of 3C-SiC(001)/SiO₂ Interface Using XPS

Abstract:

Normally-on MOSFETs were fabricated on 3C-SiC epilayers using high temperature (1300 °C) wet oxidation process. XPS analysis found little carbon at the MOS interface yet the channel mobility (60 cm²/V.s) is considerably low. Si suboxides (SiO_x, x<2) exist at the wet oxidised 3C-SiC/SiO₂ interface, which may act as interface traps and degrade the conduction performance.

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Materials Science Forum (Volume 897)

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151-154

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.151

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Online since:

May 2017

Authors:

Fan Li*, Oliver James Vavasour, Marc Walker, David M. Martin, Yogesh K. Sharma, Stephen Russell, Michael R. Jennings, Amador Pérez-Tomás, Philip Andrew Mawby

Keywords:

3C-SiC on Si, Channel Mobility, Gate Threshold, MOS, XPS

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