Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation

Rabia Y. Khosa; E.Ö. Sveinbjörnsson

doi:10.4028/www.scientific.net/MSF.897.147

Paper Titles

Oxidation Effect for the Carbon Related Defect Formation in SiC/SiO₂ Interface by First Principles Calculation
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Low Density of Near-Interface Traps at the Al₂O₃/4H-SiC Interface with Al₂O₃ Made by Low Temperature Oxidation of Al
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Non-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow States
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Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique
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Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation
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Physical Characterisation of 3C-SiC(001)/SiO₂ Interface Using XPS
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Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation
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Universal Parameter Evaluating SiO₂/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy
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Electrical Properties and Interface Structure of SiC MOSFETs with Barium Interface Passivation
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Conductance Signal from Near-Interface Traps in...

Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation

Abstract:

We find a clear correlation between the density of near-interface traps (NITs) in n-type 4H-SiC MOS capacitors and the strength of a conductance signal observed under strong accumulation. The conductance signal strength can be described by tunneling of electrons between the SiC conduction band and NITs at a rate close to the ac test signal frequency. The findings here show that the signal in dry thermal oxides depends on temperature which suggests that the electron capture cross section of the NITs is thermally activated. Direct tunneling is more prominent in samples containing low density of NITs such as oxides made by sodium enhanced oxidation (SEO).

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Periodical:

Materials Science Forum (Volume 897)

Pages:

147-150

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.147

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Online since:

May 2017

Authors:

Rabia Y. Khosa, E.Ö. Sveinbjörnsson*

Keywords:

Conductance Analysis, Interface, Near-Interface Traps (NITs)

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