Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation

Stephen Russell; Michael R. Jennings; Tian Xiang Dai; Fan Li; Dean P. Hamilton; Craig A. Fisher; Yogesh K. Sharma; Philip  Andrew Mawby; Amador Pérez-Tomás

doi:10.4028/www.scientific.net/MSF.897.155

Paper Titles

Non-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow States
p.139

Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique
p.143

Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation
p.147

Physical Characterisation of 3C-SiC(001)/SiO₂ Interface Using XPS
p.151

Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation
p.155

Universal Parameter Evaluating SiO₂/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy
p.159

Electrical Properties and Interface Structure of SiC MOSFETs with Barium Interface Passivation
p.163

The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors
p.167

Three Dimensional Dislocation Analysis of Threading Mixed Dislocation Using Multi Directional Scanning Transmission Electron Microscopy
p.173

HomeMaterials Science ForumMaterials Science Forum Vol. 897Functional Oxide as an Extreme High-k Dielectric...

Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation

Abstract:

MOS Capacitors are demonstrated on 4H-SiC using an octahedral ABO₃ ferroic thin-film as a dielectric prepared on several buffer layers. Five samples were prepared: ABO₃ on SiC, ABO₃ on SiC with a SiO₂ buffer (10 nm and 40 nm) and ABO₃ on SiC with an Al₂O₃ buffer (10nm and 40 nm). Depending on the buffer material the oxide forms in either the pyrochlore or perovskite phase. A better lattice match with the Al₂O₃ buffer yields a perovskite phase with internal switchable dipoles. Hysteresis polarization-voltage loops show an oxide capacitance of ~ 0.2 μF/cm² in the accumulation region indicating a dielectric constant of ~120.