Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al

Rabia Y. Khosa; E.Ö. Sveinbjörnsson; Michael Winters; Jawad Hassan; Robin Karhu; Erik Janzén; Niklas Rorsman

doi:10.4028/www.scientific.net/MSF.897.135

Paper Titles

Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers
p.119

Anomalous Fowler-Nordheim Tunneling through SiO₂/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements
p.123

Two-Dimensional Imaging of Trap Distribution in SiO₂/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
p.127

Oxidation Effect for the Carbon Related Defect Formation in SiC/SiO₂ Interface by First Principles Calculation
p.131

Low Density of Near-Interface Traps at the Al₂O₃/4H-SiC Interface with Al₂O₃ Made by Low Temperature Oxidation of Al
p.135

Non-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow States
p.139

Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique
p.143

Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation
p.147

Physical Characterisation of 3C-SiC(001)/SiO₂ Interface Using XPS
p.151

HomeMaterials Science ForumMaterials Science Forum Vol. 897Low Density of Near-Interface Traps at the...

Low Density of Near-Interface Traps at the Al₂O₃/4H-SiC Interface with Al₂O₃ Made by Low Temperature Oxidation of Al

Abstract:

We report on a very low density (<5×10¹¹ cm^-2) of near-interface traps (NITs) at the Al₂O₃/4H-SiC interface estimated from capacitance-voltage (CV) analysis of MOS capacitors at different temperatures. The aluminum oxide (Al₂O₃) is grown by repeated deposition and subsequent low temperature (200°C) oxidation for 5 min of thin (1-2 nm) Al layers using a hot plate. We refer to this simple method as hot plate Al₂O₃. It is observed that the density of NITs is significantly lower in the hot plate Al₂O₃ samples than in samples with Al₂O₃ grown by atomic layer deposition (ALD) at 300°C and in reference samples with thermally grown silicon dioxide grown in O₂ or N₂O ambient.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

135-138

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.135

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Online since:

May 2017

Authors:

Rabia Y. Khosa*, E.Ö. Sveinbjörnsson, Michael Winters, Jawad Hassan, Robin Karhu, Erik Janzén, Niklas Rorsman

Keywords:

Aluminum Oxide, Gate Dielectrics, Interface States, Near-Interface Traps (NITs)

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