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Paper Titles
Susceptor Coating Materials Applicable for SiC Reactor Cleaning
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Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces
p.107
Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
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Analysis of Interface Trap Density and Channel Mobility in 4H-SiC NMOS Capacitors and Lateral MOSFETs
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Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers
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Anomalous Fowler-Nordheim Tunneling through SiO2/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements
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Two-Dimensional Imaging of Trap Distribution in SiO2/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
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Oxidation Effect for the Carbon Related Defect Formation in SiC/SiO2 Interface by First Principles Calculation
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Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al
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Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers

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Abstract:

In this study, electrical properties of MOS capacitors with varying oxide thicknesses have been investigated. The oxide growth was performed at 1050 °C without any further post-oxidation annealing steps resulting in oxide thicknesses between 2 nm and 32 nm. Capacitance-Voltage measurements revealed a decreasing density of interface defects for increasing oxide thickness suggesting a deterioration of the interface at the initial stage of the growth.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

119-122

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.119

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Online since:

May 2017

Authors:

Judith Woerle*, Massimo Camarda, Christof W. Schneider, Hans Sigg, Ulrike Grossner, Jens Gobrecht

Keywords:

Conductance, Density of Interface States, Silicon Carbide (SiC), Thermal Oxidation

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© 2017 Trans Tech Publications Ltd. All Rights Reserved

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