Improvement of Quality of Thick 4H-SiC Epilayers

Akira Miyasaka; Kazutoshi Kojima; Kenji Momose; Hiroshi Osawa; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.897.59

Paper Titles

150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD
p.43

Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
p.47

Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping
p.51

High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
p.55

Improvement of Quality of Thick 4H-SiC Epilayers
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Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p⁺⁺ Emitters
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V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes
p.67

Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device
p.71

Investigation of Carrot Reduction Effect on 4H-Silicon Carbide Epitaxial Wafers with Optimized Buffer Layer
p.75

HomeMaterials Science ForumMaterials Science Forum Vol. 897Improvement of Quality of Thick 4H-SiC Epilayers

Improvement of Quality of Thick 4H-SiC Epilayers

Abstract:

The epitaxial growth of ~250 μm thick 4H-SiC epilayers has been demanded for ultra-high-voltage power devices. We have attempted to improve the quality of thick epilayers. At the edge of wafer, stacking faults, epi-crown and interfacial dislocations could be well suppressed by controlling the distribution of growth rate. Investigation of carrier concentration depth profile revealed that increasing surface roughness increased the carrier concentration during thick epitaxial growth. Under N₂-doped growth condition, memory effect by accumulation of by-products containing dopant element is also one of the reasons of the carrier concentration increasing during the growth.

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Periodical:

Materials Science Forum (Volume 897)

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59-62

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.59

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Online since:

May 2017

Authors:

Akira Miyasaka*, Kazutoshi Kojima, Kenji Momose, Hiroshi Osawa, Hajime Okumura

Keywords:

4H-SiC, Epitaxial Growth, Thick Epilayer

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