Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth
p.28
p.28
Solvent Design for High-Purity SiC Solution Growth
p.32
p.32
Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate
p.39
p.39
150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD
p.43
p.43
Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
p.47
p.47
Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping
p.51
p.51
High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
p.55
p.55
Improvement of Quality of Thick 4H-SiC Epilayers
p.59
p.59
Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters
p.63
p.63
Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
Abstract:
Trench-filling epitaxial growth of 4H-SiC was analyzed based on a simulation model for continuous fluid approximation including the Gibbs-Thomson effect. With the use of the radii of curvature at the top and bottom of the trenches, the proposed model well reproduced the measured dependence of the growth rate on the trench pitch (L) in the case of narrow (L ≤ 6.0 μm) trenches.
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Periodical:
Materials Science Forum (Volume 897)
Pages:
47-50
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Online since:
May 2017
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© 2017 Trans Tech Publications Ltd. All Rights Reserved
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