Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate

Ling Guo; Koji Kamei; Kenji Momose; Hiroshi Osawa

doi:10.4028/www.scientific.net/MSF.897.39

Paper Titles

Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H₂ Etching
p.19

SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation
p.24

Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth
p.28

Solvent Design for High-Purity SiC Solution Growth
p.32

Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate
p.39

150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD
p.43

Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
p.47

Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping
p.51

High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
p.55

HomeMaterials Science ForumMaterials Science Forum Vol. 897Evaluation and Reduction of Epitaxial Wafer...

Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate

Abstract:

In this study, we investigated the epitaxial surface defects resulting from the carbon-inclusion defects in 4H-SiC substrate. Most carbon-inclusion defects developed into one of three types of epitaxial surface defects under normal epitaxial growth conditions. Among them, we found a regular hexagonal pit by high-resolution microscopy, which we regarded as a large-pit defect, and which had an adverse impact on the reverse electrical characteristics of Schottky barrier diodes. Conversion of a carbon-inclusion defect to a large-pit defect or a triangular defect could be reduced by reducing the C/Si ratio.