Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H2 Etching

Xiu Fang Chen; Fu Sheng Zhang; Xiang Long Yang; Yan Peng; Xue Jian Xie; Tian Li; Xiao Bo Hu; Xian Gang Xu; Guang Lei Li; Rui Qi Wang

doi:10.4028/www.scientific.net/MSF.897.19

Paper Titles

Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping
p.3

Reduction of Dislocation Density in Bulk Silicon Carbide Crystals Grown by PVT on Profiled Seeds
p.7

Quality Improvement of 4’’ 4H-SiC Crystal by Using Modified Seed Adhesion Method
p.11

3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers
p.15

Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H₂ Etching
p.19

SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation
p.24

Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth
p.28

Solvent Design for High-Purity SiC Solution Growth
p.32

Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate
p.39

HomeMaterials Science ForumMaterials Science Forum Vol. 897Reduction of Dislocation Density of SiC Crystals...

Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H₂ Etching

Abstract:

Three-inch 6H-SiC bulk crystals were grown by the PVT method on the seeds processed by different treatments. The influences of seed surface morphology and subsurface damage on the dislocation density were investigated. The seed surface morphology was characterized by atomic force microscopy (AFM). The extent of the subsurface damage was estimated by electron back-scattered diffraction (EBSD) and Band Contrast (BC) value. The distribution and density of the dislocations were observed by optical microscopy (OM). The results showed that the pit density performed by H₂ 1400°C etching was nearly one order of magnitude lower than that by mechanical polishing (MP) process. So H₂ etching processed at 1400°C for 2h could completely remove the subsurface damage, compared with the MP process with the deep surface damage.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

19-23

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.19

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Online since:

May 2017

Authors:

Xiu Fang Chen, Fu Sheng Zhang, Xiang Long Yang, Yan Peng, Xue Jian Xie, Tian Li, Xiao Bo Hu, Xian Gang Xu, Guang Lei Li, Rui Qi Wang

Keywords:

6H-SiC, Dislocation Density, H₂ Etching, Subsurface Damage

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