Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping

Hiromasa Suo; Kazuma Eto; Tomohisa Kato; Kazutoshi Kojima; Hiroshi Osawa; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.897.3

Paper Titles

Preface, Committees, Sponsors

Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping
p.3

Reduction of Dislocation Density in Bulk Silicon Carbide Crystals Grown by PVT on Profiled Seeds
p.7

Quality Improvement of 4’’ 4H-SiC Crystal by Using Modified Seed Adhesion Method
p.11

3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers
p.15

Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H₂ Etching
p.19

SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation
p.24

Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth
p.28

Solvent Design for High-Purity SiC Solution Growth
p.32

HomeMaterials Science ForumMaterials Science Forum Vol. 897Bulk Growth of Low Resistivity n-Type 4H-SiC Using...

Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping

Abstract:

The growth of n-type 4H-SiC crystal was performed by physical vapor transport (PVT) growth method by using nitrogen and aluminum (N-Al) co-doping. Resistivity of N-Al co-doped 4H-SiC was as low as 5.8 mΩcm. The dislocation densities of N-Al co-doped substrates were evaluated by synchrotron radiation X-ray topography (SXRT). In addition, epitaxial growth was performed on the N-Al co-doped substrates by chemical vapor deposition (CVD). No double Shockley type stacking fault was observed in the epitaxial layer.

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Materials Science Forum (Volume 897)

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3-6

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https://doi.org/10.4028/www.scientific.net/MSF.897.3

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Online since:

May 2017

Authors:

Hiromasa Suo*, Kazuma Eto, Tomohisa Kato, Kazutoshi Kojima, Hiroshi Osawa, Hajime Okumura

Keywords:

Aluminum, Bulk Growth, Co-Doping, Low Resistivity, Nitrogen, PVT, Stacking Fault

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