Preface, Committees, Sponsors
Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping
p.3
p.3
Reduction of Dislocation Density in Bulk Silicon Carbide Crystals Grown by PVT on Profiled Seeds
p.7
p.7
Quality Improvement of 4’’ 4H-SiC Crystal by Using Modified Seed Adhesion Method
p.11
p.11
3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers
p.15
p.15
Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H2 Etching
p.19
p.19
SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation
p.24
p.24
Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth
p.28
p.28
Solvent Design for High-Purity SiC Solution Growth
p.32
p.32
Preface, Committees, Sponsors
Abstract:
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Info:
Periodical:
Materials Science Forum (Volume 897)
Online since:
May 2017
Сopyright:
© 2017 Trans Tech Publications Ltd. All Rights Reserved
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