Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth

Tsukasa Hori; Kenta Murayama; Shunta Harada; S. Xiao; M. Tagawa; Toru Ujihara

doi:10.4028/www.scientific.net/MSF.897.28

Paper Titles

Quality Improvement of 4’’ 4H-SiC Crystal by Using Modified Seed Adhesion Method
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3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers
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Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H₂ Etching
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SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation
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Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth
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Solvent Design for High-Purity SiC Solution Growth
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Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate
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150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD
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Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Formation of Basal Plane Dislocations Introduced...

Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth

Abstract:

The relationship between surface morphology and spatial distribution of basal plane dislocations in 4H-SiC crystal grown by top-seeded solution growth on the C face was investigated by the differential interference microscopy as well as X-ray topography. Basal plane dislocations were generated at the boundaries of the domains with the different macrosteps advance directions. On the other hand, at the position where macrosteps advance to the same direction, BPDs were hardly observed. This results suggest that BPD density can be decreased by the suppression of the collision of macrosteps during the solution growth on the C face controlling the surface morphology.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

28-31

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.28

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Online since:

May 2017

Authors:

Tsukasa Hori*, Kenta Murayama, Shunta Harada, S. Xiao, M. Tagawa, Toru Ujihara

Keywords:

Basal Plane Dislocation (BPD), Macrostep, Surface Morphology, Top-Seeded Solution Growth, X-Ray Topography (XRT)

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References

[1] A. Galeckas, J. Linnros, P. Pirouz, Appl. Phys. Lett. 81 (2002) 5.

Google Scholar

[2] S. Ha, P. Mieszkowski, M. Skowronski, L. B. Rowland, J. Cryst. Growth 224 (2002) 257.

Google Scholar

[3] H. Tsuchida, M. Ito, I. Kamata, M. Nagano, Phys. Status Solidi 246 (2009) 1553.

Google Scholar

[4] K. Konishi, S. Yamamoto, S. Nakata, Y. Nakamura, Y. Nakanishi, T. Tanaka, Y. Mitani, N. Tomita, Y. Toyoda, S. Yamakawa, J. Appl. Phys. 114 (2013) 014504.

Google Scholar

[5] Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, D. Koike, M. Tagawa, T. Ujihara, Appl. Phys. Express 7 (2014) 065501.

DOI: 10.7567/apex.7.065501

Google Scholar

[6] K. Kamei, K. Kusunoki, N. Yashiro, N. Okada, K. Moriguchi, H. Daikoku, M. Kado, H. Suzuki, H. Sakamoto, T. Bessho, Mater. Sci. Forum 717-720 (2012) 45.

DOI: 10.4028/www.scientific.net/msf.717-720.61

Google Scholar

[7] K. Kusunoki, K. Kamei, N. Yashiro, R. Hattori, Mater. Sci. Forum 615-617 (2009) 137.

Google Scholar

[8] K. Danno, H. Saitoh, A. Seki, H. Daikoku, Y. Fujiwara, T. Ishii, H. Sakamoto, Y. Kawai, Mater. Sci. Forum 645-648 (2010) 13.

DOI: 10.4028/www.scientific.net/msf.645-648.13

Google Scholar

[9] S. Xiao, S. Harada, K. Murayama, T. Ujihara, Cryst. Growth Des. in press.

Google Scholar

[10] H. J. Scheel, E. O. Schulz-Dubois, J. Cryst. Growth 8 (1971) 304.

Google Scholar

[11] A. Sakai, H. Sunakawa, A. Usui, Appl. Phys. Lett. 73 (1998) 481.

Google Scholar

[12] Z. Liliental-Weber, D. Cherns, J. Appl. Phys. 89 (2001) 7833.

Google Scholar