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The volume power associated with this last source is noted pth_el.
The term pth_el can be calculated using the load data and the relation pth_el=-αT0 σ& , where α is the thermal expansion coefficient and σ& the time derivative of the axial true stress.
Finally, integration over time gives the associated energies: Wheat sources, Wdissipated, Wth_el.
The second presents the energy balance during the tensile test of an Al polycristal.
A quasi static tensile test has been realized on an Al 99.5% polycrystal sheet at Vc=50 mm/min.

This feature will be supported in the PL and EL analyses.
The short-wavelength EL peak located at 445 nm originates directly from the InGN-LED chips.
The improvement of relative EL intensity correlates with the growth of crystallite size of YAG nanoparticles.
The PL and EL results can be reflected on luminance parameters.
Fu, Preparation of Y 3 Al 5 O 12: Ce powders by microwave-induced combustion process and their luminescent properties, J.

El Khoury 3, H.
El Nakat 3, H.
El-Fadel, I.
Al-Kadamany: Atmospheric Environment.
El-Fadel, M.

Koratkar et al. determined the Young’s modulus of nanotube sheets (buckypaper) which are around 2 ~ 10 GPa [4], which is lower than 1% of the modulus of SWCNTs [5].
Cai et al. got a 0.9 TPa calculation results through the tight binding method [8]; X.
Abo Al-kheer, A.
El-Hami, M.G.
El Hami, A Robust Study of Reliability-Based Optimisation Methods under Eigen-frequency.

The JTE was formed by using Al ion implantation.
Additionally, the Ti/Al anode electrodes were fabricated with a mesh shape.
Fig.s 2 (a)-(d) show the EL images.
EL images of the SSF and location of nuclei.
Summary We investigated the location of SSF nuclei in the SiC pin diodes by EL imaging.

The EL spectra from Eu3+ characteristic emission at 616 nm would be observed in all devices.
BCP was used as an electron-transporting and hole-blocking layer, tris(8-hydroxyquino)-aluminum (Alq3) as an electron-transporting layer and a complex cathode LiF/Al were deposited on emitting layer in turn by sequential vacuum thermal evaporation.
EL spectra, current density and luminance curves were exhibited in Fig. 7 (a, b, c).
The EL spectrum peaks of other three devices were consistent at 616 nm.
The EL emission from Alq3 was suppressed distinctly when BCP was used as hole-blocking layer.

For example, (Al)GaN/SiC heterojunction bipolar transistors (HBTs) are promising candidates for high-power and high-frequency amplifiers [1].
Multilayer Ti/Al contacts were formed on the GaN surface using the standard lift-off technique and with no thermal annealing.
Under forward bias, dark red EL was observed from n +-GaN/p+-4H-SiC and 6H-SiC with Na ~ 1x10 18 cm-3.
In addition, the diode on 6H-SiC showed brighter EL than that on 4H-SiC under the same current density.
From C-V measurement, 6H-SiC is better for electron injection and this speculation is supported by EL measurement.

A Study of the Behaviour of Double Oxide Films in Al Alloy Melts M.
El-Sayed1,a, H.
During their investigation of the effect of holding an Al casting in the liquid state before solidification on its entrained bifilms, El-Sayed et al. suggested the occurrence of two competing mechanisms during the holding treatment.
El-Sayed, H.
El-Sayed, H.A.G.

The highest EL intensity can be observed from the sample prepared by mixed fuel technique.
Sample Code Atomic percentage of Elements (%) Total O Al Y Ce S1 61.26 24.23 13.97 0.54 100 S2 50.18 31.32 17.19 1.31 100 Luminescence properties Figure 3 shows the electroluminescence (EL) spectra of the packaged WLED using phosphor prepared from S1 and S2 at current of 20 mA.
As can be seen, the EL intensity increased when mixed fuel was used, as shown in Figure 3(a).
EL spectra of WLED prepared from S1 (a) and S2 (b) phosphor at current of 20 mA.
Mahiou, “Elaboration and optimization of Ce-doped Y 3 Al 5 O 12 nanopowder dispersions,” J.

El-Hami and K.
El-Hami and K.
El-Hami and K.
Abo Al-kheer, A.
El-Hami, M.G.