Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging

R. Ishii; Toshiyuki Miyanagi; Isaho Kamata; Hidekazu Tsuchida; Koji Nakayama; Yoshitaka Sugawara

doi:10.4028/www.scientific.net/MSF.556-557.251

Paper Titles

Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)
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Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
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Defect Etching of Non-Polar and Semi-Polar Faces in SiC
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Dislocation in 4H n⁺ SiC Substrates and their Relationship with Epilayer Defects
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Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
p.251

Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence
p.255

Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth
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Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals
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In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
p.267

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Distinction of the Nuclei of Shockley Faults in...

Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging

Abstract:

We investigated the location of the nuclei of Shockley-type stacking faults (SSFs) in the 4H-SiC pin diodes, using electroluminescence (EL) imaging. The nuclei of SSFs were identified as three types, located (i) on the mesa edge, (ii) in the surface region, and (iii) inside the epilayer. We compared the frequency of the nuclei according to these three locations for the (0001) and (000-1) pin diodes. The number of SSFs originated from the nuclei inside the epilayer in the (000-1) pin diodes was much less (<4 cm-2) than that in the (0001) pin diodes. However, the numbers of SSF nuclei (0.3 ~ 0.8 per device) located on the mesa wall and the surface region in the (000-1) pin diodes were comparable to the (0001) pin diodes. We also investigated the process responsible for generating the SSF nuclei.

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Materials Science Forum (Volumes 556-557)

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251-254

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https://doi.org/10.4028/www.scientific.net/MSF.556-557.251

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September 2007

Authors:

R. Ishii, Toshiyuki Miyanagi, Isaho Kamata, Hidekazu Tsuchida, Koji Nakayama, Yoshitaka Sugawara

Keywords:

Basal Plane Dislocation (BPD), Electroluminescence, Shockley-Type Stacking Faults

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