In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

267-270

DOI:

10.4028/www.scientific.net/MSF.556-557.267

Citation:

K. Konias et al., "In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC", Materials Science Forum, Vols. 556-557, pp. 267-270, 2007

Online since:

September 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.