Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
p.251
p.251
Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence
p.255
p.255
Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth
p.259
p.259
Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals
p.263
p.263
In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
p.267
p.267
Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
p.271
p.271
Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
p.275
p.275
Partial Dislocations under Forward Bias in SiC
p.279
p.279
Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System
p.283
p.283
In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
Abstract:
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Periodical:
Materials Science Forum (Volumes 556-557)
Pages:
267-270
Citation:
Online since:
September 2007
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© 2007 Trans Tech Publications Ltd. All Rights Reserved
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