Partial Dislocations under Forward Bias in SiC

Abstract:

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First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We have shown that the Peierls barriers are strongly dependent on the dislocation core structures. Our results have revealed that the asymmetric reconstruction does not possess midgap states while the symmetric reconstructions, characterized by dangling bond on like atoms along the dislocation line, are always electrically active. We suggested that under forward bias, the free energies of the symmetric reconstructions are dynamically lowered by continuous electron-hole transitions between the respective deep levels and valence/conduction bands.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

279-282

DOI:

10.4028/www.scientific.net/MSF.556-557.279

Citation:

G. Savini et al., "Partial Dislocations under Forward Bias in SiC", Materials Science Forum, Vols. 556-557, pp. 279-282, 2007

Online since:

September 2007

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Price:

$35.00

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