Partial Dislocations under Forward Bias in SiC

G. Savini; A.A. El Barbary; M.I. Heggie; Sven Öberg

doi:10.4028/www.scientific.net/MSF.556-557.279

Paper Titles

Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals
p.263

In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
p.267

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
p.271

Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
p.275

Partial Dislocations under Forward Bias in SiC
p.279

Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System
p.283

The D_I Defect is Associated with a Stacking Fault?
p.287

Trends in Commercially Available SiC Substrates
p.291

Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy
p.295

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Partial Dislocations under Forward Bias in SiC

Partial Dislocations under Forward Bias in SiC

Abstract:

First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We have shown that the Peierls barriers are strongly dependent on the dislocation core structures. Our results have revealed that the asymmetric reconstruction does not possess midgap states while the symmetric reconstructions, characterized by dangling bond on like atoms along the dislocation line, are always electrically active. We suggested that under forward bias, the free energies of the symmetric reconstructions are dynamically lowered by continuous electron-hole transitions between the respective deep levels and valence/conduction bands.