Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System

Tomoaki Hatayama; S. Takenami; Hiroshi Yano; Yukiharu Uraoka; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.556-557.283

Paper Titles

In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
p.267

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
p.271

Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
p.275

Partial Dislocations under Forward Bias in SiC
p.279

Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System
p.283

The D_I Defect is Associated with a Stacking Fault?
p.287

Trends in Commercially Available SiC Substrates
p.291

Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy
p.295

XRD and Photoluminescence Whole-Wafer Mapping of 4H-SiC Wafers
p.299

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Properties of Thermally Etched 4H-SiC by...

Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System

Abstract:

By the use of Cl2-O2 thermal etching method, the etching rates of 4H-SiC were reached to about 1μm/h for Si and 40μm/h for C face at 950oC. Etch pits only appeared over 0.25-μm-etched depth on the 4H-SiC (0001) Si face. The shapes and density of etch pits are similar tendencies in the case of molten KOH etched surface. To study the relationship between thermally etched surface features and crystal defects, the planar mapping electron-beam-induced current (EBIC) technique was carried out. Almost dark areas in the EBIC image correspond to the etch pits. From the EBIC image, a shell-like pit formed by the Cl2-O2 etching on the (0001) Si face is a basal plane dislocation.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

283-286

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.283

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Online since:

September 2007

Authors:

Tomoaki Hatayama, S. Takenami, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Keywords:

Chlorine, EBIC, Etching, Oxygen

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