Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation

Norihiro Hoshino; Michio Tajima; Toshihiko Hayashi; Taro Nishiguchi; Hiroyuki Kinoshita; Hiromu Shiomi

doi:10.4028/www.scientific.net/MSF.556-557.275

Paper Titles

Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth
p.259

Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals
p.263

In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
p.267

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
p.271

Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
p.275

Partial Dislocations under Forward Bias in SiC
p.279

Properties of Thermally Etched 4H-SiC by Chlorine-Oxygen System
p.283

The D_I Defect is Associated with a Stacking Fault?
p.287

Trends in Commercially Available SiC Substrates
p.291

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Nondestructive Analysis of Stacking Faults in...

Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation

Abstract:

The advantage of room-temperature photoluminescence (PL) mapping was demonstrated for nondestructive detection of stacking faults (SFs) in off-oriented 4H-SiC epitaxial and bulk wafers. In mapping of the SF-related emission at 2.9 eV on the wafers, the SFs in the surface region appeared as a bar-shaped pattern with the long side perpendicular to the off-cut direction. The use of 266 nm light excitation is essential to detect the SF pattern in the bulk wafers because of its shallow penetration depth. The dark lines crossing the bar-shaped patterns in the epitaxial wafers are ascribable to the basal plane dislocation located close to the SF-planes.

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Silicon Carbide and Related Materials 2006

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Materials Science Forum (Volumes 556-557)

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275-278

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.275

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Online since:

September 2007

Authors:

Norihiro Hoshino, Michio Tajima, Toshihiko Hayashi, Taro Nishiguchi, Hiroyuki Kinoshita, Hiromu Shiomi

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), Bulk Crystal, Epitaxial Layer, KOH Etching, Mapping, Photoluminescence (PL), Stacking Fault

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