Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals

Abstract:

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In this paper we report, based on analysis of dislocation statistics, on the influence of growth temperature on the nucleation, propagation and annihilation mechanisms of dislocations. Using KOH defect etching and optical microscopy we have conducted dislocation tracking along lengths of crystals grown under various process temperature regimes to study their evolution and propagation mechanisms statistically. We further present the influence of growth temperature on the step structure of the growth front using AFM measurements. From the analysis of dislocation statistics and step structure in relation to temperature we derive the role of surface kinetics of the SiC gas species on the growth surface in dislocation evolution during PVT growth of bulk SiC.

Info:

Periodical:

Materials Science Forum (Volumes 556-557)

Edited by:

N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall

Pages:

263-266

DOI:

10.4028/www.scientific.net/MSF.556-557.263

Citation:

S. A. Sakwe and P. J. Wellmann, "Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals", Materials Science Forum, Vols. 556-557, pp. 263-266, 2007

Online since:

September 2007

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$35.00

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