Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)

D. Kurt Gaskill; Michael E. Mastro; Kok Keong Lew; Brenda L. VanMil; Rachael L. Myers-Ward; Ronald T. Holm; Charles R. Eddy

doi:10.4028/www.scientific.net/MSF.556-557.235

Paper Titles

6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction
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Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias
p.223

An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers
p.227

Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide
p.231

Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)
p.235

Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
p.239

Defect Etching of Non-Polar and Semi-Polar Faces in SiC
p.243

Dislocation in 4H n⁺ SiC Substrates and their Relationship with Epilayer Defects
p.247

Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
p.251

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Comparative Investigation between X-Ray...

Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)

Abstract:

A set of three 4H-SiC wafers with manufacturer specified micropipe density of 0-5 cm-2 were characterized by x-ray diffraction (XRD) maps before and after final chemical-mechanical polish. After final polish, the wafers were also investigated with atomic force microscopy, radius of curvature measurements and cross-polarization (x-pol) mapping. It was found that there was largely a lack of correlation between the XRD and x-pol maps, which strongly suggests that x-pol is insensitive to crystalline imperfections to which XRD is sensitive.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

235-238

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.235

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Online since:

September 2007

Authors:

D. Kurt Gaskill, Michael E. Mastro, Kok Keong Lew, Brenda L. VanMil, Rachael L. Myers-Ward, Ronald T. Holm, Charles R. Eddy

Keywords:

Cross Polarization, Defect Mapping, X-Ray Diffraction (XRD)

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