Paper Titles

Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis
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Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si
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Trends in Dopant Incorporation for 3C-SiC Films on Silicon
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Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps
p.213

6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction
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Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias
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An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers
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Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide
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Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)
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HomeMaterials Science ForumMaterials Science Forum Vols. 556-5576H-SiC Crystals Grown in [015] and [001]...

6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction

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Silicon Carbide and Related Materials 2006

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

219-222

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.219

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Online since:

September 2007

Authors:

Matthias Stockmeier, Rainer Hock, Octavian Filip, Boris M. Epelbaum, Albrecht Winnacker, Andreas Magerl

Keywords:

[001]-Growth, [015]-Growth, Crystal Growth, Defect, Dislocation, X-Ray Diffraction (XRD)

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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